The Physics of Semiconductor Devices de R. K. Sharma

The Physics of Semiconductor Devices: Proceedings of IWPSD 2017: Springer Proceedings in Physics, cartea 215

R. K. Sharma

D.S. Rawal

This book disseminates the current knowledge of semiconductor physics and its applications across the scientific community. It is based on a biennial workshop that provides the participating research groups with a stimulating platform for interaction and collaboration with colleagues from the same scientific community.

The book discusses the latest developments in the field of III-nitrides; materials & devices, compound semiconductors, VLSI technology, optoelectronics, sensors, photovoltaics, crystal growth, epitaxy and characterization, graphene and other 2D materials and organic semiconductors.

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Specificații

ISBN-13: 9783319976037
ISBN-10: 3319976036
Pagini: 1112
Ilustrații: LVII, 1299 p. 824 illus., 656 illus. in color. In 2 volumes, not available separately.
Dimensiuni: 155 x 235 x 90 mm
Greutate: 2.27 kg
Ediția:1st ed. 2019
Editura: Springer International Publishing
Colecția Springer
Seria Springer Proceedings in Physics

Locul publicării:Cham, Switzerland

Cuprins

Enhanced Photodetection in Visible Region in rGo/GaN Based Hybrid Photodetector.- ZigZag Phosphorene Nanoribbons Antidot â€“ Electronic structure and Device Application.- Calculation of Quantum Capacitance and Sheet Carrier Density of Graphene FETs.- Effect of Back Gate Voltage on Double Gate Single Layer Graphene Field-Effect Transistor with Improved ION.- Effects of chemical functionalization on single-walled carbon nanotubes by mild hydrogen peroxide for PV applications.- Effect of tip induced strain on nanoscale electrical properties of MoS2-Graphene heterojunctions.- Optimization of the concentration of molybdenum disulfide (MoS2) for formation of atomically thin layers.- Fabrication of 2D NEMS on flexible substrates for strain engineering in sensing applications.- Transition metal doped ZnS monolayer: The first principles insights.- Tuning Resonant Wavelength of Silicon Micro-ring Resonator with Graphene.- Diameter Dependent Band Gap Properties of Different Structures of Single-walled Carbon.-Limitations of Mott-Schottky Analysis for Organic Metal-Insulator-Semiconductor Capacitors.

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