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The Physics of Semiconductor Devices: Proceedings of IWPSD 2017 de R. K. Sharma

The Physics of Semiconductor Devices: Proceedings of IWPSD 2017: Springer Proceedings in Physics, cartea 215

Editat de R. K. Sharma, D.S. Rawal
en Limba Engleză Hardback – feb 2019
This book disseminates the current knowledge of semiconductor physics and its applications across the scientific community. It is based on a biennial workshop that provides the participating research groups with a stimulating platform for interaction and collaboration with colleagues from the same scientific community.

The book discusses the latest developments in the field of III-nitrides; materials & devices, compound semiconductors, VLSI technology, optoelectronics, sensors, photovoltaics, crystal growth, epitaxy and characterization, graphene and other 2D materials and organic semiconductors.

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Specificații

ISBN-13: 9783319976037
ISBN-10: 3319976036
Pagini: 1112
Ilustrații: LVII, 1299 p. 824 illus., 656 illus. in color. In 2 volumes, not available separately.
Dimensiuni: 155 x 235 x 90 mm
Greutate: 2.27 kg
Ediția:1st ed. 2019
Editura: Springer International Publishing
Colecția Springer
Seria Springer Proceedings in Physics

Locul publicării:Cham, Switzerland

Cuprins

Enhanced Photodetection in Visible Region in rGo/GaN Based Hybrid Photodetector.- ZigZag Phosphorene Nanoribbons Antidot – Electronic structure and Device Application.- Calculation of Quantum Capacitance and Sheet Carrier Density of Graphene FETs.- Effect of Back Gate Voltage on Double Gate Single Layer Graphene Field-Effect Transistor with Improved ION.- Effects of chemical functionalization on single-walled carbon nanotubes by mild hydrogen peroxide for PV applications.- Effect of tip induced strain on nanoscale electrical properties of MoS2-Graphene heterojunctions.- Optimization of the concentration of molybdenum disulfide (MoS2) for formation of atomically thin layers.- Fabrication of 2D NEMS on flexible substrates for strain engineering in sensing applications.- Transition metal doped ZnS monolayer: The first principles insights.- Tuning Resonant Wavelength of Silicon Micro-ring Resonator with Graphene.- Diameter Dependent Band Gap Properties of Different Structures of Single-walled Carbon.-Limitations of Mott-Schottky Analysis for Organic Metal-Insulator-Semiconductor Capacitors.

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This book disseminates the current knowledge of semiconductor physics and its applications across the scientific community. It is based on a biennial workshop that provides the participating research groups with a stimulating platform for interaction and collaboration with colleagues from the same scientific community.

The book discusses the latest developments in the field of III-nitrides; materials & devices, compound semiconductors, VLSI technology, optoelectronics, sensors, photovoltaics, crystal growth, epitaxy and characterization, graphene and other 2D materials and organic semiconductors.