Cantitate/Preț
Produs

The Physics of Submicron Semiconductor Devices: NATO Science Series B:, cartea 180

Autor Harold L. Grubin, David K. Ferry, C. Jacoboni
en Limba Engleză Paperback – 29 iun 2013
The papers contained in the volume represent lectures delivered as a 1983 NATO ASI, held at Urbino, Italy. The lecture series was designed to identify the key submicron and ultrasubmicron device physics, transport, materials and contact issues. Nonequilibrium transport, quantum transport, interfacial and size constraints issues were also highlighted. The ASI was supported by NATO and the European Research Office. H. L. Grubin D. K. Ferry C. Jacoboni v CONTENTS MODELLING OF SUB-MICRON DEVICES.................. .......... 1 E. Constant BOLTZMANN TRANSPORT EQUATION... ... ...... .................... 33 K. Hess TRANSPORT AND MATERIAL CONSIDERATIONS FOR SUBMICRON DEVICES. . .. . . . . .. . . . .. . .. . .... ... .. . . . .. . . . .. . . . . . . . . . . 45 H. L. Grubin EPITAXIAL GROWTH FOR SUB MICRON STRUCTURES.................. 179 C. E. C. Wood INSULATOR/SEMICONDUCTOR INTERFACES.......................... 195 C. W. Wilms en THEORY OF THE ELECTRONIC STRUCTURE OF SEMICONDUCTOR SURFACES AND INTERFACES......................................... 223 C. Calandra DEEP LEVELS AT COMPOUND-SEMICONDUCTOR INTERFACES........... 253 W. Monch ENSEMBLE MONTE CARLO TECHNIqUES............................. 289 C. Jacoboni NOISE AND DIFFUSION IN SUBMICRON STRUCTURES................. 323 L. Reggiani SUPERLATTICES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 361 . . . . . . . . . . . . K. Hess SUBMICRON LITHOGRAPHY 373 C. D. W. Wilkinson and S. P. Beaumont QUANTUM EFFECTS IN DEVICE STRUCTURES DUE TO SUBMICRON CONFINEMENT IN ONE DIMENSION.... ....................... 401 B. D. McCombe vii viii CONTENTS PHYSICS OF HETEROSTRUCTURES AND HETEROSTRUCTURE DEVICES..... 445 P. J. Price CORRELATION EFFECTS IN SHORT TIME, NONS TAT I ONARY TRANSPORT. . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . 477 . . . . . . . . . . . . J. J. Niez DEVICE-DEVICE INTERACTIONS............ ...................... 503 D. K. Ferry QUANTUM TRANSPORT AND THE WIGNER FUNCTION................... 521 G. J. Iafrate FAR INFRARED MEASUREMENTS OF VELOCITY OVERSHOOT AND HOT ELECTRON DYNAMICS IN SEMICONDUCTOR DEVICES............. 577 S. J. Allen, Jr.
Citește tot Restrânge

Toate formatele și edițiile

Toate formatele și edițiile Preț Express
Paperback (1) 120254 lei  43-57 zile
  Springer Us – 29 iun 2013 120254 lei  43-57 zile
Hardback (1) 120883 lei  43-57 zile
  Springer Us – 1989 120883 lei  43-57 zile

Din seria NATO Science Series B:

Preț: 120254 lei

Preț vechi: 146651 lei
-18% Nou

Puncte Express: 1804

Preț estimativ în valută:
23016 23989$ 19160£

Carte tipărită la comandă

Livrare economică 06-20 ianuarie 25

Preluare comenzi: 021 569.72.76

Specificații

ISBN-13: 9781489923844
ISBN-10: 1489923845
Pagini: 748
Ilustrații: VIII, 738 p.
Dimensiuni: 155 x 235 x 39 mm
Greutate: 1.03 kg
Ediția:1988
Editura: Springer Us
Colecția Springer
Seria NATO Science Series B:

Locul publicării:New York, NY, United States

Public țintă

Research

Cuprins

Modelling of Sub-Micron Devices.- Boltzmann Transport Equation.- Transport and Material Considerations for Submicron Devices.- Epitaxial Growth for Sub Micron Structures.- Insulator/Semiconductor Interfaces.- Theory of the Electronic Structure of Semiconductor Surfaces and Interfaces.- Deep Levels at Compound-Semiconductor Interfaces.- Ensemble Monte Carlo Techniques.- Noise and Diffusion in Submicron Structures.- Superlattices.- Submicron Lithography.- Quantum Effects in Device Structures Due to Submicron Confinement in One Dimension.- Physics of Heterostructures and Heterostructure Devices.- Correlation Effects in Short Time, Nonstationary Transport.- Device-Device Interactions.- Quantum Transport and the Wigner Function.- Far Infrared Measurements of Velocity Overshoot and Hot Electron Dynamics in Semiconductor Devices.- The Influence of Contacts on the Behavior of Near and Sub-Micron INP Devices.- Monte Carlo Simulation of Transport in Submicron Structures.- Two Dimensional Electron Gas Fet.- Hot Electron Transfer Amplifiers.- New Graded Band Gap and Superlattice Structures and their Applications to Photodetectors, Bipolar Transistors and High-Speed Devices.- Metal-Semiconductor Interfaces.- Nonequilibrium Phonons in Semiconductors: Power Dissipation of Highly Laser-Excited Electron-Hole Plasmas.- Picosecond Measurements of Device and Circuit Transient Response with Optoelectric Techniques.