Transistor Level Modeling for Analog/RF IC Design
Editat de Wladyslaw Grabinski, Bart Nauwelaers, Dominique Schreursen Limba Engleză Paperback – 19 oct 2010
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Specificații
ISBN-13: 9789048171484
ISBN-10: 9048171482
Pagini: 308
Ilustrații: XIV, 294 p.
Dimensiuni: 160 x 240 x 16 mm
Greutate: 0.49 kg
Ediția:Softcover reprint of hardcover 1st ed. 2006
Editura: SPRINGER NETHERLANDS
Colecția Springer
Locul publicării:Dordrecht, Netherlands
ISBN-10: 9048171482
Pagini: 308
Ilustrații: XIV, 294 p.
Dimensiuni: 160 x 240 x 16 mm
Greutate: 0.49 kg
Ediția:Softcover reprint of hardcover 1st ed. 2006
Editura: SPRINGER NETHERLANDS
Colecția Springer
Locul publicării:Dordrecht, Netherlands
Public țintă
Professional/practitionerCuprins
2/3-D process and device simulation. An effective tool for better understanding of internal behavior of semiconductor structures.- PSP: An advanced surface-potential-based MOSFET model.- EKV3.0: An advanced charge based MOS transistor model.A design-oriented MOS transistor compact model.- Modelling using high-frequency measurements.- Empirical FET models.- Modeling the SOI MOSFET nonlinearities. An empirical approach.- Circuit level RF modeling and design.- On incorporating parasitic quantum effects in classical circuit simulations.- Compact modeling of the MOSFET in VHDL-AMS.- Compact modeling in Verilog-A.
Recenzii
"A comprehensive book on state of the art emerging MOSFET models for the design and simulation of analog, digital or RF Integrated Circuits."
Narain Arora, Cadence Design Systems, California, USA
"This book covers modern topics in semiconductor TCAD, circuit simulation, compact models, RF modeling, etc. which are hard to find together anywhere else."
Peter Bendix, Xpedion Design Systems, California, USA
Narain Arora, Cadence Design Systems, California, USA
"This book covers modern topics in semiconductor TCAD, circuit simulation, compact models, RF modeling, etc. which are hard to find together anywhere else."
Peter Bendix, Xpedion Design Systems, California, USA
Notă biografică
Dr. Grabinski, Dr. Nauwelaers and Dr. Scheurs organized the MOS-Modeling workshop at the European Solid-State Devices Conference (ESSDERC) in 2004, and due to popular request will do again at ESSDERC 2005 in Grenoble. Dr. Grabinski is in industry, at Freescale Semiconductor, while Dr. Nauwelaers and Dr. Schreurs are in academia.
Caracteristici
Brings together a variety of modeling techniques Treats models as well as methods of implementation Is a true in depth source for MOS-modelers