Advanced High Voltage Power Device Concepts
Autor B. Jayant Baligaen Limba Engleză Paperback – 8 dec 2014
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Specificații
ISBN-13: 9781493901326
ISBN-10: 149390132X
Pagini: 584
Ilustrații: XVI, 568 p.
Dimensiuni: 155 x 235 x 31 mm
Greutate: 0.81 kg
Ediția:2012
Editura: Springer
Colecția Springer
Locul publicării:New York, NY, United States
ISBN-10: 149390132X
Pagini: 584
Ilustrații: XVI, 568 p.
Dimensiuni: 155 x 235 x 31 mm
Greutate: 0.81 kg
Ediția:2012
Editura: Springer
Colecția Springer
Locul publicării:New York, NY, United States
Public țintă
ResearchCuprins
1 Introduction.- 2 Silicon Thyristors.- 3 Silicon Carbide Thyristors.- 4 Silicon GTO.- 5 Silicon IGBT.- 6 SiC Planar MOSFET Structures.- 7 Silicon Carbide IGBT.- 8 Silicon MCT.- 9 Silicon BRT.- 10 Silicon EST.- 11 Synopsis.
Textul de pe ultima copertă
Advanced High Voltage Power Device Concepts describes devices utilized in power transmission and distribution equipment, and for very high power motor control in electric trains and steel-mills. Since these devices must be capable of supporting more than 5000-volts in the blocking mode, this books covers operation of devices rated at 5,000-V, 10,000-V and 20,000-V. Advanced concepts (the MCT, the BRT, and the EST) that enable MOS-gated control of power thyristor structures are described and analyzed in detail. In addition, detailed analyses of the silicon IGBT, as well as the silicon carbide MOSFET and IGBT, are provided for comparison purposes. Throughout the book, analytical models are generated to give a better understanding of the physics of operation for all the structures.
This book provides readers with:
This book provides readers with:
This book provides readers with:
- The first comprehensive treatment of high voltage (over 5000-volts) power devices suitable for the power distribution, traction, and motor-control markets;
- Analytical formulations for all the device structures with validation performed using numerical simulations;
- Analysis of potential silicon carbide structures that could compete with the silicon devices.
This book provides readers with:
- The first comprehensive treatment of high voltage (over 5000-volts) power devices suitable for the power distribution, traction, andmotor-control markets;
- Analytical formulations for all the device structures with validation performed using numerical simulations;
- Analysis of potential silicon carbide structures that could compete with the silicon devices.
Caracteristici
Provides the first comprehensive treatment of high voltage (over 5000-volts) power devices suitable for the power distribution, traction, and motor-control markets Includes analytical formulations for all the device structures with validation performed using numerical simulations Analyzes potential silicon carbide structures that could compete with the silicon devices and includes a comparison of the devices Includes supplementary material: sn.pub/extras