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Applied RHEED: Reflection High-Energy Electron Diffraction During Crystal Growth de Wolfgang Braun

Applied RHEED: Reflection High-Energy Electron Diffraction During Crystal Growth: Springer Tracts in Modern Physics, cartea 154

Autor Wolfgang Braun
en Limba Engleză Paperback – 20 noi 2013
The book describes RHEED (reflection high-energy electron diffraction) used as a tool for crystal growth. New methods using RHEED to characterize surfaces and interfaces during crystal growth by MBE (molecular beam epitaxy) are presented. Special emphasis is put on RHEED intensity oscillations, segregation phenomena, electron energy-loss spectroscopy and RHEED with rotating substrates.
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Specificații

ISBN-13: 9783662156148
ISBN-10: 3662156148
Pagini: 236
Ilustrații: IX, 220 p. 180 illus., 11 illus. in color.
Dimensiuni: 155 x 235 x 18 mm
Greutate: 0.34 kg
Ediția:Softcover reprint of the original 1st ed. 1999
Editura: Springer Berlin, Heidelberg
Colecția Springer
Seria Springer Tracts in Modern Physics

Locul publicării:Berlin, Heidelberg, Germany

Public țintă

Research

Cuprins

MBE-grown semiconductor interfaces.- Reflection high-energy electron diffraction (RHEED).- RHEED oscillations.- Semikinematical simulations of RHEED patterns.- Kikuchi lines.- RHEED with rotating substrates.- Reconstruction-induced phase shifts of RHEED oscillations.- Energy loss spectroscopy during growth.- Phase shifts: Models.- Applications of reconstruction-induced phase shifts.- Closing remarks.

Recenzii

Anyone interested in L.-M. Peng's chapter on RHEED will want to know that an entire volume on the subject has been written by W. Braun (9). This is a substantial work, full of practical detail...
Ultramicroscopy, 2001/87

Textul de pe ultima copertă

The book describes RHEED (reflection high-energy electron diffraction) used as a tool for crystal growth. New methods using RHEED to characterize surfaces and interfaces during crystal growth by MBE (molecular beam epitaxy) are presented. Special emphasis is put on RHEED intensity oscillations, segregation phenomena, electron energy-loss spectroscopy and RHEED with rotating substrates.

Caracteristici

Up-to-date review of the state of the art Important methods for surface and semiconductor physics Includes supplementary material: sn.pub/extras