Atomic Layer Deposition for Semiconductors
Editat de Cheol Seong Hwangen Limba Engleză Hardback – 19 oct 2013
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Specificații
ISBN-13: 9781461480532
ISBN-10: 1461480531
Pagini: 399
Ilustrații: X, 263 p. 170 illus., 81 illus. in color.
Dimensiuni: 155 x 235 x 22 mm
Greutate: 0.52 kg
Ediția:2014
Editura: Springer Us
Colecția Springer
Locul publicării:New York, NY, United States
ISBN-10: 1461480531
Pagini: 399
Ilustrații: X, 263 p. 170 illus., 81 illus. in color.
Dimensiuni: 155 x 235 x 22 mm
Greutate: 0.52 kg
Ediția:2014
Editura: Springer Us
Colecția Springer
Locul publicării:New York, NY, United States
Public țintă
ResearchCuprins
Introduction.- Precursors and reaction mechanisms.- ALD simulations.- ALD for mass-production memories (DRAM and Flash).- ALD for emerging memories.- PcRAM.- FeRAM.- Front end of the line process.- Back end of the line.- ALD machines.
Notă biografică
Cheol Seong Hwang received M.S. and Ph.D. degrees from Seoul National University, Seoul, Korea, in 1989 and 1993, respectively. In 1993, he joined the Material Science and Engineering Laboratory at the National Institutes of Standards and Technology, Gaithersburg, MD, as a Postdoctoral Research Fellow. He then joined Samsung Electronics Company, Ltd., as a Senior Researcher in 1994. In 1998, Dr. Hwang became a professor in the department of material science and engineering at Seoul National University. He has authored or coauthored more than 380 papers in international peer-reviewed scientific journals, which have been cited more than 7,500 times.Dr. Hwang was a recipient of the Alexander von Humboldt Fellowship Award, the 7th Presidential Young Scientist Award of the Korean government, and Faculty Excellent Award of Air Products, USA.
Textul de pe ultima copertă
Atomic Layer Deposition (ALD) was originally designed for depositing uniform passivation layers over a very large area for display devices in the late 1970s. Only recently, in the 21st century, has the this technique become popular for high integrated semiconductor memory devices. This book discusses ALD for all modern semiconductor devices, the basic chemistry of ALD, and models of ALD processes. The book also details ALD for both mass produced memories and emerging memories. Each chapter of the book provides history, operating principles, and a full explanation of ALD processes for each device.
Caracteristici
First book to connect missing link between semiconductor device engineers/designers and process engineers, material designers, and chemists First book solely dedicated to the application of ALD to the semiconductor/microelectronics fields Written by top experts in the field