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Bias Temperature Instability for Devices and Circuits de Tibor Grasser

Bias Temperature Instability for Devices and Circuits

Editat de Tibor Grasser
en Limba Engleză Paperback – oct 2016
This book provides a single-source reference to one of the more challenging reliability issues plaguing modern semiconductor technologies, negative bias temperature instability. Readers will benefit from state-of-the art coverage of research in topics such as time dependent defect spectroscopy, anomalous defect behavior, stochastic modeling with additional metastable states, multiphonon theory, compact modeling with RC ladders and implications on device reliability and lifetime.
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Specificații

ISBN-13: 9781493955299
ISBN-10: 1493955292
Pagini: 810
Ilustrații: XI, 810 p. 601 illus., 318 illus. in color.
Dimensiuni: 155 x 235 mm
Ediția:Softcover reprint of the original 1st ed. 2014
Editura: Springer
Colecția Springer
Locul publicării:New York, NY, United States

Cuprins

Introduction.- Characterization, Experimental Challenges.- Advanced Characterization.- Characterization of Nanoscale Devices.- Statistical Properties/Variability.- Theoretical Understanding.- Possible Defects: Experimental.- Possible Defects: First Principles.- Modeling.- Technological Impact.- Silicon dioxides/SiON.- High-k oxides.- Alternative technologies.- Circuits.

Textul de pe ultima copertă

This book provides a single-source reference to one of the more challenging reliability issues plaguing modern semiconductor technologies, negative bias temperature instability.  Readers will benefit from state-of-the art coverage of research in topics such as time dependent defect spectroscopy, anomalous defect behavior, stochastic modeling with additional metastable states, multiphonon theory, compact modeling with RC ladders and implications on device reliability and lifetime.
 ·         Enables readers to understand and model negative bias temperature instability, with an emphasis on dynamics;
·         Includes coverage of DC vs. AC stress, duty factor dependence and bias dependence;
·         Explains time dependent defect spectroscopy, as a measurement method that operates on nanoscale MOSFETs;
·         Introduces new defect model for metastable defect states, nonradiative multiphonon theory and stochastic behavior.

Caracteristici

Enables readers to understand and model negative bias temperature instability, with an emphasis on dynamics Includes coverage of DC vs. AC stress, duty factor dependence and bias dependence Explains time dependent defect spectroscopy, as a measurement method that operates on nanoscale MOSFETs Introduces new defect model for metastable defect states, nonradiative multiphonon theory and stochastic behavior Includes supplementary material: sn.pub/extras