Cantitate/Preț
Produs
Total produse
Vezi coșul
Charge-Trapping Non-Volatile Memories: Volume 1 – Basic and Advanced Devices de Panagiotis Dimitrakis

Charge-Trapping Non-Volatile Memories: Volume 1 – Basic and Advanced Devices

Editat de Panagiotis Dimitrakis
en Limba Engleză Hardback – 14 aug 2015
This book describes the basic technologies and operation principles of charge-trapping non-volatile memories. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved as well as the fundamental properties of the technology. Modern material properties used as charge-trapping layers, for new applications are introduced.
Citește tot Restrânge

Toate formatele și edițiile

Toate formatele și edițiile Preț Express
Paperback (2) 55367 lei  39-44 zile
  Springer International Publishing – 22 oct 2016 55367 lei  39-44 zile
  Springer International Publishing – 13 iul 2018 62376 lei  6-8 săpt.
Hardback (2) 62983 lei  6-8 săpt.
  Springer International Publishing – 14 aug 2015 63336 lei  3-5 săpt.
  Springer International Publishing – 22 feb 2017 62983 lei  6-8 săpt.

Preț: 63336 lei

Preț vechi: 74513 lei
-15% Nou

Puncte Express: 950
Preț estimativ în valută:
12125€ • 12603$ • 10053£

Carte disponibilă

Livrare economică 16-30 ianuarie 25

 Adaugă în coș

Wish list
Gift list
Am citit!
Adaugă în listă
Preluare comenzi: 021 569.72.76

Specificații

ISBN-13: 9783319152899
ISBN-10: 3319152890
Pagini: 250
Ilustrații: IX, 211 p. 181 illus., 146 illus. in color.
Dimensiuni: 155 x 235 x 17 mm
Greutate: 0.59 kg
Ediția:1st ed. 2015
Editura: Springer International Publishing
Colecția Springer
Locul publicării:Cham, Switzerland

Public țintă

Research

Cuprins

Preface.- Introduction to NVM devices.- A synopsis on the state of the art of NAND memories.- Charge-trap memories with ion beam modified ONO stacks.- 3D NAND Flash Architectures.- Quantum dot Nonvolatile Memories.- Two-Terminal Organic Memories with Metal or Semiconductor Nanoparticles.

Notă biografică

Dr Panagiotis Dimitrakis graduated the Physics Department of the University of Athens (BSc 1995, MSc 1998) and received his PhD degree in the field of nanocrystal memories in 2006 from the School of Applied Mathematical and Physical Sciences of the National Technical University of Athens (NTUA). He has been employed by University of Athens, NTUA and National Research Center for Scientific Research “Demokritos” (NCSRD) in several Greek and competitive EU research projects as research scientist. In addition, he was principal investigator for NCSRD in a project funded by European Space Agency (ESA) on tunable photo-detector based on QDs. Currently, he is coordinating a project on resistive memories using graphene. He has published 50 papers in international peer-reviewed journals. He has 10 invited talks and more than 40 papers in international conference proceeding volumes on the physics and the electrical characterization of submicron MOSFETs, novel FET nano-devices, nonvolaitle memories, and organic electronic devices. Also he has published two book chapters in the field of nanoelectronic memories. More specifically, he has co-organized the NVM symposia in MRS Meetings from 2010 up to 2014. He is a Member of IEEE (Electron Devices Society) and Material Research Society (MRS) and reviewer in several international journals. He has participated in the technical program committees and has organized several international conferences and Workshops in Europe and USA and edited their proceedings. Presently, he is with Institute of Nanoscience & Nanotechnology (INN)-NCSRD (since 2007) where he is the manager of the Central Cleanroom Facility-Nanotechnology & Microsystems Laboratory. His research interests are focused in the field of nonvolatile memory devices, hybrid organic/inorganic semiconductor nano-devices, Graphene nanoelectronic devices as well as the physics and characterization of nanowire
transistors and novel nanostructured photovoltaic devices.

Textul de pe ultima copertă

This book describes the basic technologies and operation principles of charge-trapping non-volatile memories. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved as well as the fundamental properties of the technology. Modern material properties used as charge-trapping layers, for new applications are introduced.

Caracteristici

Provides a comprehensive overview of the technology for charge-trapping non-volatile memories Details new architectures and current modeling concepts for non-volatile memory devices Focuses on conduction through multi-layer gate dielectrics stacks