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Charge-Trapping Non-Volatile Memories: Volume 2--Emerging Materials and Structures de Panagiotis Dimitrakis

Charge-Trapping Non-Volatile Memories: Volume 2--Emerging Materials and Structures

Editat de Panagiotis Dimitrakis
en Limba Engleză Paperback – 13 iul 2018
This book describes the technology of charge-trapping non-volatile memories and their uses. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved and the fundamental properties of the technology. Modern material properties, used as charge-trapping layers, for new applications are introduced.
  • Provides a comprehensive overview of the technology for charge-trapping non-volatile memories;
  • Details new architectures and current modeling concepts for non-volatile memory devices;
  • Focuses on conduction through multi-layer gate dielectrics stacks.
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Specificații

ISBN-13: 9783319839998
ISBN-10: 3319839993
Ilustrații: V, 211 p. 170 illus., 117 illus. in color.
Dimensiuni: 155 x 235 mm
Greutate: 0.31 kg
Ediția:Softcover reprint of the original 1st ed. 2017
Editura: Springer International Publishing
Colecția Springer
Locul publicării:Cham, Switzerland

Cuprins

Materials and Device Reliability in SONOS Memories.- Charge-Trap-Non-Volatile Memory and Focus on Flexible Flash Memory Devices.- Hybrid Memories Based on Redox Molecules.- Organic Floating-Gate Memory Structures.- Nanoparticles Based Flash-like Non Volatile Memories: Cluster Beam Synthesis of Metallic Nanoparticles and Challenges for the Overlying Control Oxide Layer.

Notă biografică

Panagiotis Dimitrakis is at the Institute of Advanced Materials Physicochemical Processes Nanotechnology & Microsystems at the National Centre for Scientific Research, Greece.

Textul de pe ultima copertă

This book describes the technology of charge-trapping non-volatile memories and their uses. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved and the fundamental properties of the technology. Modern material properties, used as charge-trapping layers, for new applications are introduced.
  • Provides a comprehensive overview of the technology for charge-trapping non-volatile memories;
  • Details new architectures and current modeling concepts for non-volatile memory devices;
  • Focuses on conduction through multi-layer gatedielectrics stacks.

Caracteristici

Provides a comprehensive overview of the technology for charge-trapping non-volatile memories Details new architectures and current modeling concepts for non-volatile memory devices Focuses on conduction through multi-layer gate dielectrics stacks Includes supplementary material: sn.pub/extras