Cantitate/Preț
Produs

Computer-Aided Design and VLSI Device Development: The Springer International Series in Engineering and Computer Science, cartea 53

Autor Kit Man Cham, Soo-Young Oh, John L. Moll, Keunmyung Lee, Paul Vandevoorde
en Limba Engleză Hardback – 31 oct 1988
examples are presented. These chapters are intended to introduce the reader to the programs. The program structure and models used will be described only briefly. Since these programs are in the public domain (with the exception of the parasitic simulation programs), the reader is referred to the manuals for more details. In this second edition, the process program SUPREM III has been added to Chapter 2. The device simulation program PISCES has replaced the program SIFCOD in Chapter 3. A three-dimensional parasitics simulator FCAP3 has been added to Chapter 4. It is clear that these programs or other programs with similar capabilities will be indispensible for VLSI/ULSI device developments. Part B of the book presents case studies, where the application of simu­ lation tools to solve VLSI device design problems is described in detail. The physics of the problems are illustrated with the aid of numerical simulations. Solutions to these problems are presented. Issues in state-of-the-art device development such as drain-induced barrier lowering, trench isolation, hot elec­ tron effects, device scaling and interconnect parasitics are discussed. In this second edition, two new chapters are added. Chapter 6 presents the methodol­ ogy and significance of benchmarking simulation programs, in this case the SUPREM III program. Chapter 13 describes a systematic approach to investi­ gate the sensitivity of device characteristics to process variations, as well as the trade-otIs between different device designs.
Citește tot Restrânge

Toate formatele și edițiile

Toate formatele și edițiile Preț Express
Paperback (1) 89903 lei  6-8 săpt.
  Springer Us – 10 noi 2011 89903 lei  6-8 săpt.
Hardback (1) 90503 lei  6-8 săpt.
  Springer Us – 31 oct 1988 90503 lei  6-8 săpt.

Din seria The Springer International Series in Engineering and Computer Science

Preț: 90503 lei

Preț vechi: 110370 lei
-18% Nou

Puncte Express: 1358

Preț estimativ în valută:
17324 18626$ 14442£

Carte tipărită la comandă

Livrare economică 19 decembrie 24 - 02 ianuarie 25

Preluare comenzi: 021 569.72.76

Specificații

ISBN-13: 9780898382778
ISBN-10: 0898382777
Pagini: 380
Ilustrații: XIV, 380 p.
Dimensiuni: 155 x 235 x 22 mm
Greutate: 0.74 kg
Ediția:2nd ed. 1988
Editura: Springer Us
Colecția Springer
Seria The Springer International Series in Engineering and Computer Science

Locul publicării:New York, NY, United States

Public țintă

Research

Cuprins

Overview.- A : Numerical Simulation Systems.- 1. Numerical Simulation Systems.- 2. Process Simulation.- 3. Device Simulation.- 4. Parasitic Elements Simulation.- B : Applications and Case Studies.- 5. Methodology in Computer-Aided Design for Process and Device Development.- 6. SUPREM III Application.- 7. Simulation Techniques for Advanced Device Development.- 8. Drain-Induced Barrier Lowering in Short Channel Transistors.- 9. A Study of LDD Device Structure Using 2-D Simulations.- 10. The Surface Inversion Problem in Trench Isolated CMOS.- 11. Development of Isolation Structures for Applications in VLSI.- 12. Transistor Design for Submicron CMOS Technology.- 13. A Systematic Study of Transistor Design Trade-offs.- 14. MOSFET Scaling by CADDET.- 15. Examples of Parasitic Elements Simulation.- Source Information of 2-D Programs.- Table of Symbols.- About the Authors.