Electrochemistry of Silicon and Its Oxide
Autor Xiaoge Gregory Zhangen Limba Engleză Paperback – 19 mar 2013
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Specificații
ISBN-13: 9781475774948
ISBN-10: 147577494X
Pagini: 540
Ilustrații: XXVI, 510 p.
Dimensiuni: 178 x 254 x 28 mm
Greutate: 0.93 kg
Ediția:Softcover reprint of the original 1st ed. 2004
Editura: Springer Us
Colecția Springer
Locul publicării:New York, NY, United States
ISBN-10: 147577494X
Pagini: 540
Ilustrații: XXVI, 510 p.
Dimensiuni: 178 x 254 x 28 mm
Greutate: 0.93 kg
Ediția:Softcover reprint of the original 1st ed. 2004
Editura: Springer Us
Colecția Springer
Locul publicării:New York, NY, United States
Public țintă
ResearchCuprins
Basic Theories of Semiconductor Electrochemistry.- Silicon/Electrolyte Interface.- Anodic Oxide.- Etching of Oxides.- Anodic Behavior.- Cathodic Behavior and Redox Couples.- Etching of Silicon.- Porous Silicon.- Summary and Closing Remarks.
Recenzii
`Dr. Zhang provides an encyclopedic compilation of the literature on the many electrochemical effects that impact the processing of silicon and its native oxide. This book will be an important reference for the silicon specialist and may have within its pages that key detail which will explain process anomalies to the MEMS practitioner.'
Steve Senturia, Weller Professor of Electrical Engineering, Massachusetts Institute of Technology
`This book is a must for every laboratory where semiconductor electrochemsitry is actively pursued. It is a welcome and recommended addition to every library of an institution where electrochemistry is a suibject of active research.'
Journal of Solid State Electrochemistry, 7:5
Steve Senturia, Weller Professor of Electrical Engineering, Massachusetts Institute of Technology
`This book is a must for every laboratory where semiconductor electrochemsitry is actively pursued. It is a welcome and recommended addition to every library of an institution where electrochemistry is a suibject of active research.'
Journal of Solid State Electrochemistry, 7:5