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Epitaxy of Semiconductors: Introduction to Physical Principles de Udo W. Pohl

Epitaxy of Semiconductors: Introduction to Physical Principles: Graduate Texts in Physics

Autor Udo W. Pohl
en Limba Engleză Paperback – 17 iun 2015
The book covers the structural and electronic properties of strained epitaxial layers, the thermodynamics and kinetics of layer growth, and the description of the major growth techniques metalorganic vapor phase epitaxy, molecular beam epitaxy and liquid phase epitaxy.
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Paperback (2) 37636 lei  38-44 zile
  Springer Berlin, Heidelberg – 17 iun 2015 37636 lei  38-44 zile
  Springer International Publishing – 22 iul 2021 49263 lei  6-8 săpt.
Hardback (2) 52349 lei  6-8 săpt.
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Specificații

ISBN-13: 9783642433313
ISBN-10: 3642433316
Pagini: 340
Dimensiuni: 155 x 235 x 18 mm
Greutate: 0.48 kg
Ediția:2013
Editura: Springer Berlin, Heidelberg
Colecția Springer
Seria Graduate Texts in Physics

Locul publicării:Berlin, Heidelberg, Germany

Public țintă

Graduate

Caracteristici

Provides the essentials for a comprehensive graduate course on crystal growth of semiconductor heterostructures
Covers thermodynamics and kinetics of layer growth and major growth techniques
Gives detailed information to apply the crystal growth techniques
Written in tutorial style
Contains many instructive diagrams
Supports learning with exercises after each chapter and solutions in the end of the book

Cuprins

Introduction.- Structural Properties of Heterostructures.- Electronic Properties of Heterostructures.- Thermodynamics of Epitaxial Layer-Growth.- Atomistic Aspects of Epitaxial Layer-Growth.- In situ Growth Monitoring.- Application of Surfactants.- Doping, Diffusion, and Contacts.- Methods of Epitaxy.- Special Growth Techniques.

Notă biografică

Dr. rer. nat. Udo W. Pohl, professor of experimental physics, studied physics in Aachen and Berlin, Germany, and received his Ph.D. degree in 1988 from the Technical University of Berlin, where he is currently principal investigator in the Institute of Solid State Physics. He is a member of the German Physical Society, participated in international conference committees, and has given keynote addresses at international conferences. Since the early 1990ies he has given lectures on semiconductor physics and epitaxy. In 2009, he was appointed Adjunct Professor of Physics at Technical University of Berlin. He is series editor of Materials Sciences, has authored over 200 journal articles and conference papers, the books Epitaxy of Semiconductors and – together with Prof. Dr. Karl W. Böer – Semiconductor Physics, thirteen book contributions, and patents. His current research interests include physics and epitaxy of semiconductor nanostructures and devices.

Textul de pe ultima copertă

The extended and revised edition of this textbook provides essential information for a comprehensive upper-level graduate course on the crystalline growth of semiconductor heterostructures. Heteroepitaxy is the basis of today’s advanced electronic and optoelectronic devices, and it is considered one of the most important fields in materials research and nanotechnology. The book discusses the structural and electronic properties of strained epitaxial layers, the thermodynamics and kinetics of layer growth, and it describes the major growth techniques: metalorganic vapor-phase epitaxy, molecular-beam epitaxy, and liquid-phase epitaxy. It also examines in detail cubic and hexagonal semiconductors, strain relaxation by misfit dislocations, strain and confinement effects on electronic states, surface structures, and processes during nucleation and growth. Requiring only minimal knowledge of solid-state physics, it provides natural sciences, materials science and electrical engineering students and their lecturers elementary introductions to the theory and practice of epitaxial growth, supported by references and over 300 detailed illustrations.