Fundamentals of Power Semiconductor Devices
Autor B. Jayant Baligaen Limba Engleză Paperback – 23 aug 2016
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Specificații
ISBN-13: 9781489977656
ISBN-10: 1489977651
Pagini: 1096
Ilustrații: XXIII, 1069 p.
Dimensiuni: 155 x 235 x 55 mm
Greutate: 1.5 kg
Ediția:Softcover reprint of the original 1st ed. 2008
Editura: Springer Us
Colecția Springer
Locul publicării:New York, NY, United States
ISBN-10: 1489977651
Pagini: 1096
Ilustrații: XXIII, 1069 p.
Dimensiuni: 155 x 235 x 55 mm
Greutate: 1.5 kg
Ediția:Softcover reprint of the original 1st ed. 2008
Editura: Springer Us
Colecția Springer
Locul publicării:New York, NY, United States
Cuprins
Material Properties and Transport Physics.- Breakdown Voltage.- Schottky Rectifiers.- P-i-N Rectifiers.- Power MOSFETs.- Bipolar Junction Transistors.- Thyristors.- Thyristors.- Synopsis.
Textul de pe ultima copertă
Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are developed. The treatment focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices.
Drawing upon years of practical experience and using numerous examples and illustrative applications, B. Jayant Baliga discusses:
Drawing upon years of practical experience and using numerous examples and illustrative applications, B. Jayant Baliga discusses:
- Numerical simulation examples to elucidate the operating physics and validate the models
- Device performance attributes that allow practicing engineers in the industry to develop products
- Treatment of all types of power rectifiers and transistors to create a comprehensive reference in the field
- Fundamentals of Power Semiconductor Devices will be of interest to practicing engineers in the power semiconductor device community and can also serve as an ideal textbook for teaching courses on power semiconductor devices due to the extensive analytical treatment provided for all device structures.
Caracteristici
Provides extensive analytical formulations for design and analysis of structures Includes numerical simulation examples to elucidate the operating physics and validate the models Analyzes device performance attributes to allow practicing engineers in the industry to develop products Presents a cohesive treatment of all types of power rectifiers and transistors to create a comprehensive reference in the field Includes supplementary material: sn.pub/extras
Notă biografică
Jayant Baliga is an internationally recognized expert on power semiconductor devices. He is a Member of the National Academy of Engineering and a Fellow of the IEEE. He spent 15 years at the General Electric Research and Development Center, Schenectady, NY, leading their power device effort and was bestowed the highest scientific rank of Coolidge Fellow. He joined NCSU in 1988 as a Full Professor and was promoted to the rank of 'Distinguished University Professor' in 1997. Among his many NCSU honors, he was the recepient of the 1998 O. Max Gardner Award given by the North Carolina University Board of Governors to the one person within the 16 constituent universities who has made 'the greatest contribution to the welfare of the human race'; and the 2011 Alexander Quarles Holladay Medal of Excellence, the highest honor at NCSU from the Board of Trustees.
Prof. Baliga has authored/edited 18 books and over 500 scientific articles. He has been granted 120 U.S. Patents. The IEEE has recognized him numerous times - most recently with the 'Lamme Medal' at Whitehall Palace in London. Scientific American magazine included him among the 'Eight Heroes of the Semiconductor Revolution' when commemorating the 50th anniversary of the invention of the transistor.
Prof. Baliga invented, developed and commercialized the Insulated Gate Bipolar Trannsistor (IGBT) at GE. The IGBT is extensively used in the consumer, industrial, lighting, transportation, medical, renewable energy, and other sectors of the economy. It has enabled enormous reduction of gasoline and electrical energy use, resulting in huge cost savings to consumers, and reduction of world-wide carbon dioxide emissions. A detailed report on the applications and social impact of the IGBT is available. He received the National Medal of Technology and Innovation, the highest form of recognition given to an engineer by the United States Government, from President Obama in October2011, at the White House; and the North Carolina Award for Science from Governor Purdue in October 2012.
Prof. Baliga has authored/edited 18 books and over 500 scientific articles. He has been granted 120 U.S. Patents. The IEEE has recognized him numerous times - most recently with the 'Lamme Medal' at Whitehall Palace in London. Scientific American magazine included him among the 'Eight Heroes of the Semiconductor Revolution' when commemorating the 50th anniversary of the invention of the transistor.
Prof. Baliga invented, developed and commercialized the Insulated Gate Bipolar Trannsistor (IGBT) at GE. The IGBT is extensively used in the consumer, industrial, lighting, transportation, medical, renewable energy, and other sectors of the economy. It has enabled enormous reduction of gasoline and electrical energy use, resulting in huge cost savings to consumers, and reduction of world-wide carbon dioxide emissions. A detailed report on the applications and social impact of the IGBT is available. He received the National Medal of Technology and Innovation, the highest form of recognition given to an engineer by the United States Government, from President Obama in October2011, at the White House; and the North Carolina Award for Science from Governor Purdue in October 2012.