Fundamentals of Power Semiconductor Devices
Autor B. Jayant Baligaen Limba Engleză Paperback – 14 feb 2019
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Specificații
ISBN-13: 9783030067656
ISBN-10: 3030067653
Pagini: 1086
Ilustrații: XXXII, 1086 p. 838 illus., 559 illus. in color.
Dimensiuni: 155 x 235 x 58 mm
Greutate: 1.91 kg
Ediția:Softcover reprint of the original 2nd ed. 2019
Editura: Springer International Publishing
Colecția Springer
Locul publicării:Cham, Switzerland
ISBN-10: 3030067653
Pagini: 1086
Ilustrații: XXXII, 1086 p. 838 illus., 559 illus. in color.
Dimensiuni: 155 x 235 x 58 mm
Greutate: 1.91 kg
Ediția:Softcover reprint of the original 2nd ed. 2019
Editura: Springer International Publishing
Colecția Springer
Locul publicării:Cham, Switzerland
Cuprins
Introduction.- Material Properties and Transport Physics.- Breakdown Voltage.- Schottky Rectifiers.- P-i-N Rectifiers.- Power MOSFETs.- Bipolar Junction Transistors.- Thyristors.- Insulated Gate Bipolar Thyristors.- Synopsis.
Notă biografică
Jayant Baliga is an internationally recognized expert on power semiconductor devices. He is a Member of the National Academy of Engineering and a Fellow of the IEEE. He spent 15 years at the General Electric Research and Development Center, Schenectady, NY, leading their power device effort and was bestowed the highest scientific rank of Coolidge Fellow. He joined NCSU in 1988 as a Full Professor and was promoted to the rank of 'Distinguished University Professor' in 1997. Among his many NCSU honors, he was the recepient of the 1998 O. Max Gardner Award given by the North Carolina University Board of Governors to the one person within the 16 constituent universities who has made 'the greatest contribution to the welfare of the human race'; and the 2011 Alexander Quarles Holladay Medal of Excellence, the highest honor at NCSU from the Board of Trustees.
Prof. Baliga has authored/edited 18 books and over 500 scientific articles. He has been granted 120 U.S. Patents. The IEEE has recognized him numerous times - most recently with the 'Lamme Medal' at Whitehall Palace in London. Scientific American magazine included him among the 'Eight Heroes of the Semiconductor Revolution' when commemorating the 50th anniversary of the invention of the transistor.
Prof. Baliga invented, developed and commercialized the Insulated Gate Bipolar Trannsistor (IGBT) at GE. The IGBT is extensively used in the consumer, industrial, lighting, transportation, medical, renewable energy, and other sectors of the economy. It has enabled enormous reduction of gasoline and electrical energy use, resulting in huge cost savings to consumers, and reduction of world-wide carbon dioxide emissions. A detailed report on the applications and social impact of the IGBT is available. He received the National Medal of Technology and Innovation, the highest form of recognition given to an engineer by the United States Government, from President Obama in October2011, at the White House; and the North Carolina Award for Science from Governor Purdue in October 2012.
Prof. Baliga has authored/edited 18 books and over 500 scientific articles. He has been granted 120 U.S. Patents. The IEEE has recognized him numerous times - most recently with the 'Lamme Medal' at Whitehall Palace in London. Scientific American magazine included him among the 'Eight Heroes of the Semiconductor Revolution' when commemorating the 50th anniversary of the invention of the transistor.
Prof. Baliga invented, developed and commercialized the Insulated Gate Bipolar Trannsistor (IGBT) at GE. The IGBT is extensively used in the consumer, industrial, lighting, transportation, medical, renewable energy, and other sectors of the economy. It has enabled enormous reduction of gasoline and electrical energy use, resulting in huge cost savings to consumers, and reduction of world-wide carbon dioxide emissions. A detailed report on the applications and social impact of the IGBT is available. He received the National Medal of Technology and Innovation, the highest form of recognition given to an engineer by the United States Government, from President Obama in October2011, at the White House; and the North Carolina Award for Science from Governor Purdue in October 2012.
Textul de pe ultima copertă
This textbook provides an in-depth treatment of the physics of power semiconductor devices that are commonly used by the power electronics industry. Drawing upon decades of industry and teaching experience and using numerous examples and illustrative applications, the author discusses in detail the various device performance attributes that allow practicing engineers to develop energy-efficient products. Coverage includes all types of power rectifiers and transistors and analytical models for explaining the operation of all power semiconductor devices are developed and demonstrated in each section of the book. Throughout the book, emphasis is placed on deriving simple analytical expressions that describe the underlying physics and enable representation of the device electrical characteristics. This treatment is invaluable for teaching a course on power devices because it allows the operating principles and concepts to be conveyed with quantitative analysis. The treatmentfocuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices. This new edition also includes a chapter on the impact of power semiconductor devices on energy savings and reduction of carbon emissions.
- Provides comprehensive textbook for courses on physics of power semiconductor devices;
- Includes extensive analytical formulations for design and analysis of device structures;
- Uses numerical simulation examples in every section to elucidate the operating physics and validate the models;
- Analyzes device performance attributes that enable development of real, energy-efficient products;
- Includes numerous exercises in each chapter to reinforce concepts introduced;
- Includes a chapter on the impact of power semiconductor devices on energy savings and reduction of carbon emissions.
Caracteristici
Provides comprehensive textbook for courses on physics of power semiconductor devices Includes extensive analytical formulations for design and analysis of device structures Uses numerical simulation examples in every section to elucidate the operating physics and validate the models Analyzes device performance attributes that enable development of real, energy-efficient products; Includes numerous exercises in each chapter to reinforce concepts introduced Includes a chapter on the impact of power semiconductor devices on energy savings and reduction of carbon emissions