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GaN and SiC Power Devices: From Fundamentals to Applied Design and Market Analysis de Maurizio Di Paolo Emilio

GaN and SiC Power Devices: From Fundamentals to Applied Design and Market Analysis: Synthesis Lectures on Engineering, Science, and Technology

Autor Maurizio Di Paolo Emilio
en Limba Engleză Hardback – 2 feb 2024
This book provides a single-source reference for any reader requiring basic and advanced information on wide bandgap semiconductors and related design topics. Focusing on practicability, it explains the principles of GaN and SiC semiconductors, manufacturing, characterization, market and design for key applications.
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Specificații

ISBN-13: 9783031506536
ISBN-10: 3031506537
Pagini: 264
Ilustrații: XV, 264 p. 47 illus., 41 illus. in color.
Dimensiuni: 168 x 240 mm
Greutate: 0.61 kg
Ediția:1st ed. 2024
Editura: Springer Nature Switzerland
Colecția Springer
Seria Synthesis Lectures on Engineering, Science, and Technology

Locul publicării:Cham, Switzerland

Cuprins

Introduction.- Wide bandgap Semiconductors.- GaN overview.- SiC overview.- Electrical Characteristics.- Circuit Design with GaN and SiC.- Electric Vehicles.- Renewable Energies.- Motor Drivers.- Thermal Management.- Power Supplies.- Lidar and Space Applications.

Notă biografică

Maurizio Di Paolo Emilio is Editor in Chief of Power Electronics News and EEWeb, and an EE Times correspondent. He holds a Ph.D in physics and is a telecommunications engineer. He has worked on projects concerning gravitational waves research, designing a thermal compensation system (TCS) and data acquisition and control systems, and on others about x-ray microbeams in collaboration with Columbia University and motor control for space with INFN. TCS was applied to the Virgo and LIGO experiments, which detected gravitational waves for the first time and earned the Nobel Prize in 2017.

Textul de pe ultima copertă

This book provides a single-source reference for any reader requiring basic and advanced information on wide bandgap semiconductors and related design topics. Focusing on practicability, it explains the principles of GaN and SiC semiconductors, manufacturing, characterization, market and design for key applications.

Caracteristici

Provides a single-source reference on power circuit design with wide bandgap semiconductors Covers both theoretical and practical aspects of circuit design with GaN and SiC devices Explains principles of GaN and SiC semiconductors, manufacturing, characterization, design and market for key applications