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Metal-Dielectric Interfaces in Gigascale Electronics: Thermal and Electrical Stability: Springer Series in Materials Science, cartea 157

Autor Ming He, Toh-Ming Lu
en Limba Engleză Hardback – dec 2011
Metal-dielectric interfaces are ubiquitous in modern electronics. As advanced gigascale electronic devices continue to shrink, the stability of these interfaces is becoming an increasingly important issue that has a profound impact on the operational reliability of these devices. In this book, the authors present the basic science underlying  the thermal and electrical stability of metal-dielectric interfaces and its relationship to the operation of advanced interconnect systems in gigascale electronics. Interface phenomena, including chemical reactions between metals and dielectrics, metallic-atom diffusion, and ion drift, are discussed based on fundamental physical and chemical principles. Schematic diagrams are provided throughout the book to illustrate  interface phenomena and the principles that govern them.
Metal-Dielectric Interfaces in Gigascale Electronics  provides a unifying approach to the diverse and sometimes contradictory test results that are reported in the literature on metal-dielectric interfaces. The goal is to provide readers with a clear account of the relationship between interface science and its applications in interconnect structures. The material presented here will also be of interest to those engaged in field-effect transistor and memristor device research, as well as university researchers and industrial scientists working in the areas of electronic materials processing, semiconductor manufacturing, memory chips, and IC design.
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Specificații

ISBN-13: 9781461418115
ISBN-10: 1461418119
Pagini: 190
Ilustrații: XI, 149 p.
Dimensiuni: 155 x 235 x 15 mm
Greutate: 0.36 kg
Ediția:2012
Editura: Springer
Colecția Springer
Seria Springer Series in Materials Science

Locul publicării:New York, NY, United States

Public țintă

Research

Cuprins

Preface.- 1. Introduction.- 2. Metal-Dielectric Diffusion Processes: Fundamentals.- 3. Experimental Techniques.- 4. Al-Dielectric Interfaces.- 5. Cu-Dielectric Interfaces.- 6. Barrier Metal-Dielectric Interfaces.- 7. Self-Forming Barriers. 8. Kinetics of Ion Drift.- 9. Time-Dependent Dielectric Breakdown (TDDB) and Future Directions.

Textul de pe ultima copertă

Metal-dielectric interfaces are ubiquitous in modern electronics. As advanced gigascale electronic devices continue to shrink, the stability of these interfaces is becoming an increasingly important issue that has a profound impact on the operational reliability of these devices. In this book, the authors present the basic science underlying  the thermal and electrical stability of metal-dielectric interfaces and its relationship to the operation of advanced interconnect systems in gigascale electronics. Interface phenomena, including chemical reactions between metals and dielectrics, metallic-atom diffusion, and ion drift, are discussed based on fundamental physical and chemical principles. Schematic diagrams are provided throughout the book to illustrate  interface phenomena and the principles that govern them.
Metal-Dielectric Interfaces in Gigascale Electronics  provides a unifying approach to the diverse and sometimes contradictory test results that are reported in the literature on metal-dielectric interfaces. The goal is to provide readers with a clear account of the relationship between interface science and its applications in interconnect structures. The material presented here will also be of interest to those engaged in field-effect transistor and memristor device research, as well as university researchers and industrial scientists working in the areas of electronic materials processing, semiconductor manufacturing, memory chips, and IC design.   Presents a unified approach to understanding the diverse phenomena observed at metal-dielectric interfaces

Features fundamental considerations in the physics and chemistry of metal-dielectric interactions
Explores mechanisms of metal atom diffusion and metal ion drift in dielectrics

Provides keys to understanding reliability in gigascale electronics

Focuses on a dynamic area of current research that is a foundation of futureinterconnect systems, memristors, and solid-state electrolyte devices
Presents a unified approach to understanding the diverse phenomena observed at metal-dielectric interfaces

Caracteristici

Presents a unified approach to understanding the diverse phenomena observed at metal-dielectric interfaces Features fundamental considerations in the physics and chemistry of metal-dielectric interactions Explores mechanisms of metal atom diffusion and metal ion drift in dielectrics Provides keys to understanding reliability in gigascale electronics Focuses on a dynamic area of current research that is a foundation of future interconnect systems, memristors, and solid-state electrolyte devices Includes supplementary material: sn.pub/extras