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Novel Three-state Quantum Dot Gate Field Effect Transistor: Fabrication, Modeling and Applications de Supriya Karmakar

Novel Three-state Quantum Dot Gate Field Effect Transistor: Fabrication, Modeling and Applications

Autor Supriya Karmakar
en Limba Engleză Paperback – 17 sep 2016
The book presents the fabrication and circuit modeling of quantum dot gate field effect transistor (QDGFET) and quantum dot gate NMOS inverter (QDNMOS inverter). It also introduces the development of a circuit model of QDGFET based on Berkley Short Channel IGFET model (BSIM). Different ternary logic circuits based on QDGFET are also investigated in this book. Advanced circuit such as three-bit and six bit analog-to-digital converter (ADC) and digital-to-analog converter (DAC) were also simulated.
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Paperback (1) 61507 lei  6-8 săpt.
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Hardback (1) 62110 lei  6-8 săpt.
  Springer India – 10 dec 2013 62110 lei  6-8 săpt.

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Specificații

ISBN-13: 9788132234906
ISBN-10: 8132234901
Pagini: 148
Ilustrații: XIV, 134 p. 121 illus., 49 illus. in color.
Dimensiuni: 155 x 235 x 8 mm
Greutate: 0.22 kg
Ediția:Softcover reprint of the original 1st ed. 2014
Editura: Springer India
Colecția Springer
Locul publicării:New Delhi, India

Cuprins

Introduction: Multi State Devices and Logic.- Quantum Dot Gate Field Effect Transistor Device Structures.- Quantum Dot Gate Field Effect Transistors Fabrication and Characterization.- Quantum DOT Gate Field Effect Transistors Theory and Device Modeling.- Quantum Dot Gate NMOS Inverter.- Quantum Dot Gate Field Effect Transistor (QDGFET): Circuit Model and Ternary Logic Inverter.- Analog-to-Digital Converter (ADC) and Digital-to-Analog Converter (DAC) Using Quantum DOT Gate Field Effect Transistor (QDGFET).- Performance in SUB-25nm Range.- Conclusions.

Notă biografică

Dr. Supriya Karmakar is currently working as an Engineer in Intel Corporation, Hillsboro, Oregon, USA. Dr. Karmakar completed his PhD in Electrical Engineering from University of Connecticut in the year 2011. The specialization was "Novel Three State Quantum Dot Gate Field Effect Transistor: Fabrication, Modeling and Applications". He has five years experience in semiconductor device fabrication and circuit modeling in his PhD academic career in Department of Electrical and Computer Engineering, University of Connecticut. He has modified different photolithography processes and metal organic chemical vapor deposition (MOCVD) techniques to fabricate various types of semiconductor devices like quantum dot gate field effect transistor (QDGFET), quantum dot gate non-volatile memory (QDNVM), quantum dot channel field effect transistors (QDCFET), Solar Cells etc. for different projects. He is also an expert in designing different types of masks for photolithography as well as E-Beam lithography. Dr. Karmakar has also published more than 30 papers in international peer-reviewed journals and conference proceedings.

Textul de pe ultima copertă

The book presents the fabrication and circuit modeling of quantum dot gate field effect transistor (QDGFET) and quantum dot gate NMOS inverter (QDNMOS inverter). It also introduces the development of a circuit model of QDGFET based on Berkley Short Channel IGFET model (BSIM). Different ternary logic circuits based on QDGFET are also investigated in this book. Advanced circuit such as three-bit and six bit analog-to-digital converter (ADC) and digital-to-analog converter (DAC) were also simulated.

Caracteristici

Introduces a novel semiconductor device for multi valued logic implementation which can make reader to continue new research in this direction in future Provides details of step-by-step foundation of quantum dot gate field effect transistor Discusses three state logic design fundamentals Entails the simple comparator design and its application in designing ADC and DAC