Cantitate/Preț
Produs

Polarization Effects in Semiconductors: From Ab Initio Theory to Device Applications

Editat de Colin Wood, Debdeep Jena
en Limba Engleză Hardback – 10 dec 2007
Polarization Effects in Semiconductors: From Ab Initio Theory to Device Applications presents the latest understanding of the solid state physics, electronic implications and practical applications of the unique spontaneous or pyro-electric polarization charge of wurtzite compound semiconductors, and associated piezo-electric effects in strained thin film heterostructures.  These heterostructures are used in wide band gap semiconductor based sensors, in addition to various electronic and opto-electronic semiconductor devices.
The book covers the ab initio theory of polarization in cubic and hexagonal semiconductors, growth of thin film GaN, GaN/AlGaN GaAlN/ AlGaInN, and other nitrides, and SiC heterostructures.  It discusses the effects of spontaneous and piezoelectric polarization on band diagrams and electronic properties of abrupt and compositionally graded heterostructures, electronic characterization of polarization-induced charge distributions by scanning-probe spectroscopies, and gauge factors and strain effects.  In addition, polarization in extended defects, piezo-electric strain/charge engineering, and application to device design and processing are covered. The effects of polarization on the fundamental electron transport properties, and on the basic optical transitions are described. The crucial role of polarization in devices such as high electron mobility transistors (HEMTs) and light-emitting diodes (LEDs) is covered. 
The chapters are authored by professors and researchers in the fields of physics, applied physics and electrical engineering, who worked for 5 years under the "Polarization Effects in Semiconductors" DOD funded Multi Disciplinary University Research Initiative.  This book will be of interest to graduate students and researchers working in the field of wide-bandgap semiconductor physics and their device applications.  It will also be useful for practicing engineers in the field of wide-bandgap semiconductor device research and development.
Citește tot Restrânge

Toate formatele și edițiile

Toate formatele și edițiile Preț Express
Paperback (1) 109625 lei  6-8 săpt.
  Springer Us – 29 oct 2010 109625 lei  6-8 săpt.
Hardback (1) 120679 lei  6-8 săpt.
  Springer Us – 10 dec 2007 120679 lei  6-8 săpt.

Preț: 120679 lei

Preț vechi: 147169 lei
-18% Nou

Puncte Express: 1810

Preț estimativ în valută:
23095 23990$ 19184£

Carte tipărită la comandă

Livrare economică 04-18 februarie 25

Preluare comenzi: 021 569.72.76

Specificații

ISBN-13: 9780387368313
ISBN-10: 0387368310
Pagini: 515
Ilustrații: XIV, 515 p.
Dimensiuni: 155 x 235 x 29 mm
Greutate: 0.85 kg
Ediția:2008
Editura: Springer Us
Colecția Springer
Locul publicării:New York, NY, United States

Public țintă

Academic/professional/technical: Research and professional

Cuprins

Theoretical Approach to Polarization Effects in Semiconductors.- Polarization Induced Effects in GaN-based Heterostructures and Novel Sensors.- Lateral and Vertical Charge Transport in Polar Nitride Heterostructures.- Polarization Effects on Low-Field Transport & Mobility in III-V Nitride HEMTs.- Local Polarization Effects in Nitride Heterostructures and Devices.- Polarization in Wide Bandgap Semiconductors and their Characterization by Scanning Probe Microscopy.- Functionally Graded Polar Heterostuctures: New Materials for Multifunctional Devices.- Polarization in GaN Based Heterostructures and Heterojunction Field Effect Transistors (HFETs).- Effects of Polarization in Optoelectronic Quantum Structures.

Textul de pe ultima copertă

Polarization Effects in Semiconductors: From Ab Initio Theory to Device Applications presents the latest understanding of the solid state physics, electronic implications and practical applications of the unique spontaneous or pyro-electric polarization charge of wurtzite compound semiconductors, and associated piezo-electric effects in strained thin film heterostructures.  These heterostructures are used in wide band gap semiconductor based sensors, in addition to various electronic and opto-electronic semiconductor devices.
The book covers the ab initio theory of polarization in cubic and hexagonal semiconductors, growth of thin film GaN, GaN/AlGaN GaAlN/ AlGaInN, and other nitrides, and SiC heterostructures.  It discusses the effects of spontaneous and piezoelectric polarization on band diagrams and electronic properties of abrupt and compositionally graded heterostructures, electronic characterization of polarization-induced charge distributions by scanning-probe spectroscopies, and gauge factors and strain effects.  In addition, polarization in extended defects, piezo-electric strain/charge engineering, and application to device design and processing are covered. The effects of polarization on the fundamental electron transport properties, and on the basic optical transitions are described. The crucial role of polarization in devices such as high electron mobility transistors (HEMTs) and light-emitting diodes (LEDs) is covered. 
The chapters are authored by professors and researchers in the fields of physics, applied physics and electrical engineering, who worked for 5 years under the "Polarization Effects in Semiconductors" DOD funded Multi Disciplinary University Research Initiative.  This book will be of interest to graduate students and researchers working in the field of wide-bandgap semiconductor physics and their device applications.  It will also be useful for practicing engineers in the field of wide-bandgap semiconductor device research and development.

Caracteristici

Describes in detail the broad reaching complexity and greatly increased design versatility allowed by polarization effects in high power electronic devices Authored primarily by the physics, applied physics and electrical engineering professors and students who worked for 5 years under the "Polarization Effects in Semiconductors" DOD funded Multi Disciplinary University Research Initiative Includes supplementary material: sn.pub/extras