Process and Device Modeling for Integrated Circuit Design: NATO Science Series E:, cartea 21
Editat de F. van de Wiele, W.L. Engl, P. Jespersen Limba Engleză Paperback – 11 mar 2012
Din seria NATO Science Series E:
- Preț: 1500.36 lei
- Preț: 1500.14 lei
- Preț: 912.70 lei
- 24% Preț: 1570.65 lei
- 20% Preț: 339.27 lei
- Preț: 389.77 lei
- Preț: 379.04 lei
- Preț: 415.79 lei
- 18% Preț: 1199.35 lei
- 18% Preț: 1799.33 lei
- 18% Preț: 1204.33 lei
- Preț: 373.35 lei
- Preț: 401.08 lei
- 18% Preț: 1803.96 lei
- 5% Preț: 359.89 lei
- Preț: 399.00 lei
- 18% Preț: 1801.04 lei
- Preț: 411.83 lei
- Preț: 391.27 lei
- Preț: 390.73 lei
- 18% Preț: 2964.63 lei
- Preț: 381.09 lei
- 5% Preț: 383.20 lei
- 18% Preț: 1203.68 lei
- 18% Preț: 1204.78 lei
- 18% Preț: 1209.40 lei
- 5% Preț: 3460.25 lei
- 18% Preț: 1802.76 lei
- 5% Preț: 371.19 lei
- 18% Preț: 1202.93 lei
- Preț: 384.86 lei
- Preț: 387.70 lei
- 18% Preț: 2438.72 lei
- 5% Preț: 1400.27 lei
- Preț: 388.07 lei
- 5% Preț: 2099.08 lei
- 18% Preț: 2987.20 lei
Preț: 413.18 lei
Nou
Puncte Express: 620
Preț estimativ în valută:
79.08€ • 82.20$ • 65.51£
79.08€ • 82.20$ • 65.51£
Carte tipărită la comandă
Livrare economică 05-19 februarie 25
Preluare comenzi: 021 569.72.76
Specificații
ISBN-13: 9789401175852
ISBN-10: 9401175853
Pagini: 880
Ilustrații: 876 p.
Dimensiuni: 155 x 235 x 46 mm
Greutate: 1.21 kg
Ediția:Softcover reprint of the original 1st ed. 1977
Editura: SPRINGER NETHERLANDS
Colecția Springer
Seria NATO Science Series E:
Locul publicării:Dordrecht, Netherlands
ISBN-10: 9401175853
Pagini: 880
Ilustrații: 876 p.
Dimensiuni: 155 x 235 x 46 mm
Greutate: 1.21 kg
Ediția:Softcover reprint of the original 1st ed. 1977
Editura: SPRINGER NETHERLANDS
Colecția Springer
Seria NATO Science Series E:
Locul publicării:Dordrecht, Netherlands
Public țintă
ResearchCuprins
Section I. Introduction..- Device modeling.- Semiconductor physics and characterization of bipolar transistors.- Section II Basic technologies and measurements.- Diffusion phenomena in silicon.- Silicon epitaxy and oxidation.- Ion implantation.- Pattern generation for integrated circuit fabrication.- Test structures and diagnostic techniques.- Defect characterization.- Measurement techniques.- Fundamental limits in integrated circuits.- Section III Modeling of bipolar devices.- Review of models for bipolar transistors.- Measurements for bipolar devices.- Bipolar transistor model for IC design.- Modeling of bipolar devices.- High current density effects in the collector of bipolar transistors.- Emitter effects in bipolar transistors.- Bipolar models for statistical IC design.- Survey of I2L modeling.- Section IV Modeling of MOS devices.- Review of physical models for MOS transistors.- Characterization and measurements of MOST devices.- Surface characterization. C-V technique.- Surface characterization. Weak inversion.- Ion implanted MOS transistors.- Ion implanted MOS transistors. Depletion mode devices.- Physical MOS models.- Short channels. Scaled down MOSFET’s.- SOS MOSFET’s.- A MOST model for CAD with automated parameter determination.- CAD models of MOSFET’s.- Section V Process modeling.- Process modeling.- Process modeling.- Process oriented IC design.- Modeling of I2L and process selection.- Simulation of integrated circuits fabrication processes.- Participants.- Lecturers.- Scientific organizing committee.