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Process Technology for Semiconductor Lasers: Crystal Growth and Microprocesses de Kenichi Iga

Process Technology for Semiconductor Lasers: Crystal Growth and Microprocesses: Springer Series in Materials Science, cartea 30

Autor Kenichi Iga, Susumu Kinoshita
en Limba Engleză Paperback – 21 dec 2011
Process Technology for Semiconductor Lasers describes the design principles of semiconductor lasers, mainly from the fabrication point of view. A review is given of the history of semiconductor-laser development and applications and of the materials used in lasing at short to long wavelengths. The basic design principles for semiconductor-laser devices and the epitaxy for laser production are discussed. An entire chapter is devoted to the technology of liquid-phase epitaxy, and another one to vapor-phase and beam epitaxies. The characterizations of laser materials and the fabrication and characteristics of semiconductor lasers are treated. Mode-control techniques are presented, and surface-emitting lasers are introduced in the final chapter.
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Specificații

ISBN-13: 9783642795787
ISBN-10: 3642795781
Pagini: 188
Ilustrații: X, 169 p.
Dimensiuni: 155 x 235 x 10 mm
Greutate: 0.27 kg
Ediția:Softcover reprint of the original 1st ed. 1996
Editura: Springer Berlin, Heidelberg
Colecția Springer
Seria Springer Series in Materials Science

Locul publicării:Berlin, Heidelberg, Germany

Public țintă

Research

Cuprins

1. Introduction.- 1.1 Outline of Semiconductor Laser Theory.- 1.2 Semiconductor Lasers in Opto-electronics.- 1.3 Necessary Technology for Semiconductor Lasers.- 1.4 Brief History of Semiconductor Lasers.- 1.5 Typical Semiconductor Lasers.- 2. Materials for Semiconductor Lasers.- 2.1 III-V Compound Semiconductors.- 2.2 Crystals for Visible to Near-Infrared-Wavelength Emission Semiconductor Lasers.- 2.3 Crystals for Semiconductor Lasers with 1-µm and Longer Emission Wavelengths.- 3. Basic Design of Semiconductor Lasers.- 3.1 Double Heterostructures and Their Design.- 4. Epitaxy of III–V Compound Semiconductors.- 4.1 III-V Substrates for Semiconductor Lasers.- 4.2 Bulk Growth Techniques.- 4.3 Heteroepitaxial Techniques.- 5. Liquid Phase Epitaxy and Growth Technology.- 5.1 Outline of an LPE System.- 5.2 Reactors.- 5.3 Loading Sub-System.- 5.4 Pump and Exhaust Sub-System.- 5.5 Gas-Flow Sub-System.- 5.6 Heating Sub-System.- 5.7 Maintenance.- 5.8 Liquid-Phase Epitaxy.- 5.9 LPE Process.- 6. Vapor Phase and Beam Epitaxies.- 6.1 Metal-Organic Chemical Vapor Deposition (MOCVD).- 6.2 Molecular-Beam and Chemical-Beam Epitaxy.- 7. Characterization of Laser Materials.- 7.1 Evaluation of Laser Wafers.- 7.2 Measurement of Lattice Mismatch.- 7.3 Measurement of the Impurity Concentration.- 7.4 Photoluminescence.- 7.5 Measurement of the Refractive Index.- 7.6 Misfit Dislocation.- 8. Semiconductor-Laser Devices — Fabrication and Characteristics.- 8.1 Fabrication of Fundamental Laser Devices.- 8.2 Current Injection and Contacts.- 8.3 Evaluation of the Threshold-Current Density.- 8.4 Gain Bandwidth and Oscillation Spectra.- 8.5 Output and Efficiency of Semiconductor Lasers.- 8.6 Near-Field Pattern and Far-Field Pattern.- 8.7 Temperature Characteristics.- 8.8 Reliability.- 9. Mode-ControlTechniques in Semiconductor Lasers.- 9.1 Transverse-Mode Characteristics and the Single-Mode Condition.- 9.2 Longitudinal-Mode Control.- 9.3 Burying Epitaxy on Mesas and V-Grooves.- 9.4 Mass-Transport Technique.- 9.5 Selective Meltback Technique.- 9.6 Overgrowth on Gratings.- 9.7 Growth of Quantum Wells.- 9.8 Growth of Multilayer Bragg Mirrors.- 10. Surface-Emitting Lasers.- 10.1 The Concept of Surf ace-Emitting Lasers.- 10.2 Structure and Characteristics.- 10.3 Semiconductor Multi-Layer Structure.- 10.4 Two-Dimensional Arrays.- 10.5 Ultralow-Threshold Devices.- 10.6 Future Prospects.- References.

Textul de pe ultima copertă

Process Technology for Semiconductor Lasers describes the design principles of semiconductor lasers, mainly from the fabrication point of view. Starting out with the history of semiconductor-laser development and applications the materials for use in lasing from short to long wavelengths are reviewed. The basic design principles for semiconductor- laser devices and the epitaxy for laser production are discussed. An entire chapter is devoted to the technology of liquid-phase epitaxy, and another one to vapor-phase and beam epitaxies, respectively. The characterizations of laser materials, and the fabrication and characteristics of semiconductor lasers are treated. Mode-control techniques are presented, and surface-emitting lasers are introduced in the final chapter.