Rare Earth and Transition Metal Doping of Semiconductor Materials: Synthesis, Magnetic Properties and Room Temperature Spintronics: Woodhead Publishing Series in Electronic and Optical Materials
Editat de Volkmar Dierolf, Ian Ferguson, John M Zavadaen Limba Engleză Hardback – 17 feb 2016
This book looks at the semiconductor materials used for spintronics applications, in particular focusing on wide band-gap semiconductors doped with transition metals and rare earths. These materials are of particular commercial interest because their spin can be controlled at room temperature, a clear opposition to the most previous research on Gallium Arsenide, which allowed for control of spins at supercold temperatures.
Part One of the book explains the theory of magnetism in semiconductors, while Part Two covers the growth of semiconductors for spintronics. Finally, Part Three looks at the characterization and properties of semiconductors for spintronics, with Part Four exploring the devices and the future direction of spintronics.
- Examines materials which are of commercial interest for producing smaller, faster, and more power-efficient computers and other devices
- Analyzes the theory behind magnetism in semiconductors and the growth of semiconductors for spintronics
- Details the properties of semiconductors for spintronics
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Specificații
ISBN-13: 9780081000410
ISBN-10: 0081000413
Pagini: 470
Dimensiuni: 152 x 229 x 28 mm
Greutate: 0.88 kg
Editura: ELSEVIER SCIENCE
Seria Woodhead Publishing Series in Electronic and Optical Materials
ISBN-10: 0081000413
Pagini: 470
Dimensiuni: 152 x 229 x 28 mm
Greutate: 0.88 kg
Editura: ELSEVIER SCIENCE
Seria Woodhead Publishing Series in Electronic and Optical Materials
Cuprins
Part One: Theory of magnetism in III-V semiconductors
1 Computational Nano-materials Design for Nano-Spintronics : Room Temperature Spintronics Applications
2 Electronic structure of magnetic impurities and defects in semiconductors: a guide to the theoretical models
3 Modeling magnetism in Rare Earth-doped Gallium Nitride bulk and nanoparticles
Part Two: Magnetic semiconductors based on Rare Earth/Transition Metals
4 Prospects for Rare-Earth-Based DMS Alloys and Hybrid Magnetic Rare-Earth/Semiconductor Heterostructures
5 Magneto-Optical Properties of Er-doped GaAs
6 Gadolinium-doped Gallium-Nitride (GaN:Gd): synthesis routes, structure and magnetism
7 MOCVD Growth and Magnetic-Optical Characterization of Er-doped III-N Films
8 Growth of Eu-doped GaN and its Magneto-Optical Properties
9 Optical and Magnetic Characterization of III-N:Nd grown by MBE
Part Three: Properties of magnetic semiconductors and spintronic devices
10 Growth of Gadolinium-doped Gallium Nitride (GaN:Gd) and Manganese-doped Gallium Nitride (GaN:Mn) and spin devices
11 Gadolinium-doped III-Nitride Diluted Magnetic Semiconductors for Spintronics Applications
12 Ferromagnetic Behavior in Transition Metal Doped III-N Semiconductors
13 Bipolar magnetic junction transistors for logic applications
1 Computational Nano-materials Design for Nano-Spintronics : Room Temperature Spintronics Applications
2 Electronic structure of magnetic impurities and defects in semiconductors: a guide to the theoretical models
3 Modeling magnetism in Rare Earth-doped Gallium Nitride bulk and nanoparticles
Part Two: Magnetic semiconductors based on Rare Earth/Transition Metals
4 Prospects for Rare-Earth-Based DMS Alloys and Hybrid Magnetic Rare-Earth/Semiconductor Heterostructures
5 Magneto-Optical Properties of Er-doped GaAs
6 Gadolinium-doped Gallium-Nitride (GaN:Gd): synthesis routes, structure and magnetism
7 MOCVD Growth and Magnetic-Optical Characterization of Er-doped III-N Films
8 Growth of Eu-doped GaN and its Magneto-Optical Properties
9 Optical and Magnetic Characterization of III-N:Nd grown by MBE
Part Three: Properties of magnetic semiconductors and spintronic devices
10 Growth of Gadolinium-doped Gallium Nitride (GaN:Gd) and Manganese-doped Gallium Nitride (GaN:Mn) and spin devices
11 Gadolinium-doped III-Nitride Diluted Magnetic Semiconductors for Spintronics Applications
12 Ferromagnetic Behavior in Transition Metal Doped III-N Semiconductors
13 Bipolar magnetic junction transistors for logic applications