Silicon Devices and Process Integration: Deep Submicron and Nano-Scale Technologies
Autor Badih El-Karehen Limba Engleză Paperback – 29 oct 2010
Features include:
- A review of silicon properties which provides a foundation for understanding the device properties discussion, including mobility-enhancement by straining silicon;
- State-of-the-art technologies on high-K gate dielectrics, low-K dielectrics, Cu interconnects, and SiGe BiCMOS;
- CMOS-only applications, such as subthreshold current and parasitic latch-up;
- Advanced Enabling processes and process integration.
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Springer Us – 12 ian 2009 | 949.98 lei 43-57 zile |
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Specificații
ISBN-13: 9781441942241
ISBN-10: 1441942246
Pagini: 624
Ilustrații: XXVI, 598 p.
Dimensiuni: 155 x 235 x 33 mm
Greutate: 0.86 kg
Ediția:Softcover reprint of hardcover 1st ed. 2009
Editura: Springer Us
Colecția Springer
Locul publicării:New York, NY, United States
ISBN-10: 1441942246
Pagini: 624
Ilustrații: XXVI, 598 p.
Dimensiuni: 155 x 235 x 33 mm
Greutate: 0.86 kg
Ediția:Softcover reprint of hardcover 1st ed. 2009
Editura: Springer Us
Colecția Springer
Locul publicării:New York, NY, United States
Public țintă
Professional/practitionerCuprins
Properties of the Silicon Crystal. Valence-bond and energy-band models. Thermal equilibrium statistics. Carrier transport mechanisms. Non-equilibrium conditions and carrier lifetime.- Junctions and Contacts. Ohmic, non-ohmic, and rectifying contacts. PN junctions, homo- and hetero-junctions. Contact und junction characterization, parameter extraction. Varactors.- Junction Field-Effect Transistor, JFET. Structure and mode of operation. Physics of JFET. JFET characterization and parameter extraction. High-voltage applications. Parasitic effects.- Bipolar Junction Transistor, BJT. Structure and mode of operation. Physics of BJT. Heterojunction Bipolar Transistor, HBT. Transistor characterization and parameter extraction. High-voltage applications.- Parasitic effects.
Textul de pe ultima copertă
Silicon Devices and Process Integration is compiled from industrial and academic lecture notes and reflects years of experience in the development of silicon devices. It is prepared specifically for engineers and scientists in semiconductor research, development and manufacturing. It is also suitable for a one-semester course in electrical engineering and materials science at the upper undergraduate or lower graduate level. The book covers both the theoretical and practical aspects of modern silicon devices and the relationship between their electrical properties and processing conditions.
Topics covered include: MOS structure, parameter extraction - Short and narrow-channel effects - CMOS mobility enhancement techniques - High-K gate dielectrics, advanced gate stacks - Low-K dielectrics and Cu interconnects - Analog devices and passive components - CMOS and BiCMOS process integration - DRAM, SRAM and NVM cell structures.
The book covers state-of-the-art silicon devices and integrated process technologies. It represents a comprehensive discussion of modern silicon devices, their characteristics, and interactions with process parameters.
Topics covered include: MOS structure, parameter extraction - Short and narrow-channel effects - CMOS mobility enhancement techniques - High-K gate dielectrics, advanced gate stacks - Low-K dielectrics and Cu interconnects - Analog devices and passive components - CMOS and BiCMOS process integration - DRAM, SRAM and NVM cell structures.
The book covers state-of-the-art silicon devices and integrated process technologies. It represents a comprehensive discussion of modern silicon devices, their characteristics, and interactions with process parameters.
Caracteristici
Focuses on process integration techniques and technology Addresses both raw silicon material and demonstrates their use in components Includes supplementary material: sn.pub/extras