TSV 3D RF Integration: High Resistivity Si Interposer Technology
Autor Shenglin Ma, Yufeng Jinen Limba Engleză Paperback – 26 apr 2022
A series of cases are presented, including an example of an integrated inductor, a microstrip inter-digital filter, and a stacked patch antenna. Each chapter includes a systematic and comparative review of the research literature, offering researchers and engineers in microelectronics a uniquely useful handbook to help solve problems in 3D heterogenous RF integration oriented Hr-Si interposer technology.
- Provides a detailed demonstration of the design and process development of HR-Si (High-Resistivity Silicon) interposer technology
- Presents a series of implementation case studies that detail modeling and simulation, integration, qualification and testing methods
- Offers a systematic and comparative literature review of HR-Si interposer technology by topic
- Offers solutions to problems with TSV (through silicon via) interposer technology, including high frequency loss and cooling problems
- Gives a systematic and accessible accounting on this leading technology
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Specificații
ISBN-13: 9780323996020
ISBN-10: 0323996027
Pagini: 292
Dimensiuni: 191 x 235 mm
Greutate: 0.5 kg
Editura: ELSEVIER SCIENCE
ISBN-10: 0323996027
Pagini: 292
Dimensiuni: 191 x 235 mm
Greutate: 0.5 kg
Editura: ELSEVIER SCIENCE
Public țintă
Engineers in microelectronics such as advanced package technology for 5G RF modules; graduate students working on microelectronics.Cuprins
1. Introduction to HR-Si Interposer Technology 2. Design, process and electrical verification of HR-Si interposer 3. Design, verification and optimization of novel vertical RF transmission structure in HR-Si interposer 4. HR-Si TSV integrated inductor 5. Verification of 2.5D/3D heterogeneous RF integration of HR-Si interposer 6. 3D heterogeneous RF integration oriented HR-Si interposer embedded with microchannel 7. Patch Antenna in Stacked HR-Si interposers 8. Through Glass Via Technology 9. Conclusion and outlook