Atomic Layer Deposition: Principles, cs, and Nanotechnology Applications, Second Editio n

en Limba Engleză Hardback – 27 iun 2013

Since the first edition was published in 2008, Atomic Layer Deposition (ALD) has emerged as a powerful, and sometimes preferred, deposition technology. The new edition of this groundbreaking monograph is the first text to review the subject of ALD comprehensively from a practical perspective. It covers ALD's application to microelectronics (MEMS) and nanotechnology; many important new and emerging applications; thermal processes for ALD growth of nanometer thick films of semiconductors, oxides, metals and nitrides; and the formation of organic and hybrid materials.

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Specificații

ISBN-13: 9781118062777
ISBN-10: 1118062779
Pagini: 272
Dimensiuni: 156 x 244 x 20 mm
Greutate: 0.57 kg
Ediția:2nd Edition
Editura: Wiley
Locul publicării:Hoboken, United States

Public țintă

In the academic sector, this book will be of great interest to chemical, optical, mechanical engineers as well as those working in nanotechnology. In the industrial sector, semiconductors, renewable solar energy, microelectronics (MEMS), nanotechnology, coatings, are some of the sectors that have considerable use of ALD technology.
The book can also be used on courses on Atomic Layer Deposition or thin films.

(Please include secondary markets)
The text will be of interest to chemists, physicists, materials scientists and process engineers involved in the development of ultra–thin film deposition processes and technology.

The book is also highly suitable for a graduate level course in Atomic Layer Deposition.

Cuprins

Notă biografică

Tommi Kääriäinen is a researcher at the Advanced Surface Technology Research Laboratory (ASTRaL) in Lappeenranta University of Technology (LUT), Finland. He has over nine years of experience in thin film deposition and analytical techniques. He has especially focused on atomic layer deposition (ALD) at low temperatures and recently on spatial and roll-to-roll ALD. David Cameron received his BSc in electrical and electronic engineering from the University of Glasgow in 1972. In 2004, he joined LUT as Professor of Material Technology and Director of ASTRaL. His research career has been in the area of thin film deposition and since joining ASTRaL, his work has focused on ALD. He has also worked on molecular beam epitaxy, plasma chemical vapour deposition, magnetron sputtering, and sol-gel deposition. Marja-Leena Kääriäinen has conducted ALD research for over 10 years. Her focus has been on the growth and structure of nanoscale metal oxide films. She has a particular interest in the photoactivity, photocatalytic activity, and antibacterial properties of ALD-grown thin films. Her background is in chemical engineering, which she studied at LUT and Michigan Technological University. Currently, she is a researcher at ASTRaL. Arthur Sherman has 60 years of industrial experience, which includes almost 20 years with General Electric, seven years on the corporate staff of RCA, several years at Applied Materials, and six years at Varian Associates. He earned a master's degree in aeronautical engineering at Princeton University and a PhD at the University of Pennsylvania. He has published extensively, including approximately 50 research papers published in archive journals and three scientific monographs.

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