Electrical Characterization of Silicon-on-Insulator Materials and Devices: The Springer International Series in Engineering and Computer Science, cartea 305
Autor Sorin Cristoloveanu, Sheng Lien Limba Engleză Hardback – 30 iun 1995
Toate formatele și edițiile | Preț | Express |
---|---|---|
Paperback (1) | 1212.68 lei 43-57 zile | |
Springer Us – 23 feb 2014 | 1212.68 lei 43-57 zile | |
Hardback (1) | 1218.78 lei 43-57 zile | |
Springer Us – 30 iun 1995 | 1218.78 lei 43-57 zile |
Din seria The Springer International Series in Engineering and Computer Science
- Preț: 119.98 lei
- 24% Preț: 1041.97 lei
- 20% Preț: 422.81 lei
- Preț: 206.36 lei
- 20% Preț: 313.26 lei
- 20% Preț: 638.76 lei
- 23% Preț: 687.70 lei
- 18% Preț: 1216.57 lei
- 18% Preț: 957.92 lei
- 20% Preț: 641.36 lei
- 18% Preț: 941.79 lei
- 20% Preț: 641.87 lei
- 15% Preț: 632.77 lei
- 20% Preț: 639.09 lei
- 18% Preț: 942.24 lei
- 20% Preț: 639.72 lei
- 20% Preț: 987.57 lei
- 20% Preț: 641.21 lei
- 18% Preț: 939.89 lei
- 20% Preț: 988.23 lei
- 18% Preț: 949.94 lei
- 20% Preț: 640.23 lei
- 15% Preț: 644.75 lei
- 18% Preț: 943.20 lei
- 18% Preț: 1212.36 lei
- 18% Preț: 950.57 lei
- 15% Preț: 639.24 lei
- 18% Preț: 941.47 lei
- 18% Preț: 940.38 lei
- 20% Preț: 1275.16 lei
Preț: 1218.78 lei
Preț vechi: 1486.32 lei
-18% Nou
Puncte Express: 1828
Preț estimativ în valută:
233.42€ • 240.49$ • 195.53£
233.42€ • 240.49$ • 195.53£
Carte tipărită la comandă
Livrare economică 24 februarie-10 martie
Preluare comenzi: 021 569.72.76
Specificații
ISBN-13: 9780792395485
ISBN-10: 0792395484
Pagini: 381
Ilustrații: XV, 381 p.
Dimensiuni: 155 x 235 x 22 mm
Greutate: 0.74 kg
Ediția:1995
Editura: Springer Us
Colecția Springer
Seria The Springer International Series in Engineering and Computer Science
Locul publicării:New York, NY, United States
ISBN-10: 0792395484
Pagini: 381
Ilustrații: XV, 381 p.
Dimensiuni: 155 x 235 x 22 mm
Greutate: 0.74 kg
Ediția:1995
Editura: Springer Us
Colecția Springer
Seria The Springer International Series in Engineering and Computer Science
Locul publicării:New York, NY, United States
Public țintă
ResearchCuprins
Preface.- 1 Introduction.- 1.1 Why SOI ?.- 1.2 Why Not Yet SOI ?.- 1.3 Why an SOI Book?.- 2 Methods of Forming SOI Wafers.- 2.1 SIMOX.- 2.2 Wafer Bonding.- 2.3 Zone-Melting Recrystallization.- 2.4 Epitaxial Lateral Overgrowth.- 2.5 Full Isolation by Porous Oxidized Silicon.- 2.6 Silicon on Sapphire.- 2.7 Silicon on Zirconia.- 3 SOI Devices.- 3.1 Advanced CMOS and Bipolar Devices.- 3.2 Radiation-Hardened Circuits.- 3.3 High-Voltage Devices.- 3.4 High-Temperature Devices.- 3.5 Low-Power Applications.- 3.6 Three-Dimensional Devices.- 3.7 Transducers.- 3.8 Innovative Devices.- 4 Wafer-Screening Techniques.- 4.1 The Basis for Wafer Screening.- 4.2 Surface Photovoltage.- 4.3 Dual-Beam S-Polarized Reflectance.- 4.4 Dual-Beam Optical Modulation.- 4.5 Other Optical Methods.- 4.6 Point Contact Pseudo-MOS Transistor.- 4.7 Quick-Turnaround Capacitance.- 4.8 Pinhole Detection.- 4.9 Conclusion.- 5 Transport Measurements.- 5.1 Four-Point Probe.- 5.2 Spreading Resistance.- 5.3 Hall Effect and Magnetoresistance.- 5.4 Van der Pauw Measurements.- 5.5 Photoconductivity.- 5.6 PICTS.- 6 SIS Capacitor-Based Characterization Techniques.- 6.1 Capacitance and Conductance Techniques.- 6.2 Bias-Scan DLTS Technique.- 6.4 Zerbst Method and Generation Lifetime.- 6.5 MOS Capacitance Method.- 7 Diode Measurements.- 7.1 Current—Voltage Measurements in a P—N Diode.- 7.2 Differential Current/Capacitance Method.- 7.3 Gated-Diode Measurements.- 7.4 Deep-Level Transient Spectroscopy.- 8 Electrical Characterization of SOI Materials and Devices MOS Transistor Characteristics.- 9 Transistor-Based Characterization Techniques.- List of Symbols.