FinFET/GAA Modeling for IC Simulation and Design: Using the BSIM-CMG Standard
Autor Yogesh Singh Chauhan, Chenming Hu, S. Salahuddin, Girish Pahwa, Avirup Dasgupta, Darsen Lu, Sriramkumar Vanugopalan, Ali Niknejad, Sourabh Khandelwal, Juan Pablo Duarte, Navid Payvadosien Limba Engleză Paperback – 28 aug 2024
With this book, users will learn Why you should use FinFET, The physics and operation of FinFET Details of the FinFET standard model (BSIM-CMG), Parameter extraction in BSIM-CMG FinFET circuit design and simulation, and more.
- Authored by the lead inventor and developer of FinFET and developers of the BSIM-CMG standard model, providing an expert’s insight into the specifications of the standard
- A new edition of the original groundbreaking book on the industry-standard FinFET model—BSIM-CMG
- Includes a new chapter providing a comprehensive introduction to GAAFET, including motivations, device concepts, structure, benefits, and the industry standard GAAFET model
- Covers the most recent developments in the BSIM-CMG model
- Presents an updated RF modeling of FinFET using the BSIM-CMG model including parameter extraction
- Includes a new chapter on cryogenic modeling
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Specificații
ISBN-13: 9780323957298
ISBN-10: 0323957293
Pagini: 324
Ilustrații: 200 illustrations
Dimensiuni: 191 x 235 x 19 mm
Greutate: 0.66 kg
Ediția:2
Editura: ELSEVIER SCIENCE
ISBN-10: 0323957293
Pagini: 324
Ilustrații: 200 illustrations
Dimensiuni: 191 x 235 x 19 mm
Greutate: 0.66 kg
Ediția:2
Editura: ELSEVIER SCIENCE
Public țintă
Device modelers, circuit designers, graduate students in electronic engineering.Cuprins
1. 3D thin-body FinFET and GAA: From device to compact model
2. Compact models for analog and RF applications
3. Core model for FinFETs
4. Gate-all-around FETs
5. Channel current and real device effects
6. Leakage currents
7. Charge, capacitance, and nonquasi-static effects
8. Parasitic resistances and capacitances
9. Noise
10. Junction diode I-V and C-V models
11. Benchmark tests for compact models
12. BSIM-CMG model parameter extraction
13. Temperature dependence
14. Cryogenic temperature modeling
2. Compact models for analog and RF applications
3. Core model for FinFETs
4. Gate-all-around FETs
5. Channel current and real device effects
6. Leakage currents
7. Charge, capacitance, and nonquasi-static effects
8. Parasitic resistances and capacitances
9. Noise
10. Junction diode I-V and C-V models
11. Benchmark tests for compact models
12. BSIM-CMG model parameter extraction
13. Temperature dependence
14. Cryogenic temperature modeling