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FinFET/GAA Modeling for IC Simulation and Design: Using the BSIM-CMG Standard

Autor Yogesh Singh Chauhan, Chenming Hu, S. Salahuddin, Girish Pahwa, Avirup Dasgupta, Darsen Lu, Sriramkumar Vanugopalan, Ali Niknejad, Sourabh Khandelwal, Juan Pablo Duarte, Navid Payvadosi
en Limba Engleză Paperback – 28 aug 2024
FinFET/GAA Modeling for IC Simulation and Design: Using the BSIM-CMG Standard, Second Edition is the first to book to explain FinFET modeling for IC simulation and the industry standard – BSIM-CMG - describing the rush in demand for advancing the technology from planar to 3D architecture as now enabled by the approved industry standard. The book gives a strong foundation on the physics and operation of FinFET, details aspects of the BSIM-CMG model such as surface potential, charge and current calculations, and includes a dedicated chapter on parameter extraction procedures, thus providing a step-by-step approach for the efficient extraction of model parameters.
With this book, users will learn Why you should use FinFET, The physics and operation of FinFET Details of the FinFET standard model (BSIM-CMG), Parameter extraction in BSIM-CMG FinFET circuit design and simulation, and more.


  • Authored by the lead inventor and developer of FinFET and developers of the BSIM-CMG standard model, providing an expert’s insight into the specifications of the standard
  • A new edition of the original groundbreaking book on the industry-standard FinFET model—BSIM-CMG
New to This Edition
  • Includes a new chapter providing a comprehensive introduction to GAAFET, including motivations, device concepts, structure, benefits, and the industry standard GAAFET model
  • Covers the most recent developments in the BSIM-CMG model
  • Presents an updated RF modeling of FinFET using the BSIM-CMG model including parameter extraction
  • Includes a new chapter on cryogenic modeling
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Specificații

ISBN-13: 9780323957298
ISBN-10: 0323957293
Pagini: 324
Ilustrații: 200 illustrations
Dimensiuni: 191 x 235 x 19 mm
Greutate: 0.68 kg
Ediția:2
Editura: ELSEVIER SCIENCE

Public țintă

Device modelers, circuit designers, graduate students in electronic engineering.

Cuprins

1. 3D thin-body FinFET and GAA: From device to compact model
2. Compact models for analog and RF applications
3. Core model for FinFETs
4. Gate-all-around FETs
5. Channel current and real device effects
6. Leakage currents
7. Charge, capacitance, and nonquasi-static effects
8. Parasitic resistances and capacitances
9. Noise
10. Junction diode I-V and C-V models
11. Benchmark tests for compact models
12. BSIM-CMG model parameter extraction
13. Temperature dependence
14. Cryogenic temperature modeling