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III-Nitride Semiconductor Optoelectronics de Zetian Mi

III-Nitride Semiconductor Optoelectronics: Semiconductors and Semimetals, cartea 96

Zetian Mi, Chennupati Jagadish
en Limba Engleză Hardback – 4 ian 2017
III-Nitride Semiconductor Optoelectronics covers the latest breakthrough research and exciting developments in the field of III-nitride compound semiconductors. It includes important topics on the fundamentals of materials growth, characterization, and optoelectronic device applications of III-nitrides. Bulk, quantum well, quantum dot, and nanowire heterostructures are all thoroughly explored.


  • Contains the latest breakthrough research in III-nitride optoelectronics
  • Provides a comprehensive presentation that covers the fundamentals of materials growth and characterization and the design and performance characterization of state-of-the-art optoelectronic devices
  • Presents an in-depth discussion on III-nitride bulk, quantum well, quantum dot, and nanowire technologies
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Specificații

ISBN-13: 9780128095843
ISBN-10: 0128095849
Pagini: 492
Dimensiuni: 152 x 229 mm
Greutate: 0.82 kg
Editura: ELSEVIER SCIENCE
Seria Semiconductors and Semimetals

Public țintă

This volume is well suited for students and researchers in the field of semiconductors. It will be very valuable to researchers and engineers in the field of III-nitrides and optoelectronics. Moreover, the in-depth discussions on the growth and characterization of a broad range of semiconductor nanostructures will benefit students and researchers working on nanomaterials, nanotechnology, and emerging devices.

Cuprins

1. Materials Challenges of AlGaN-Based UV Optoelectronic DevicesM.H. Crawford2. Development of Deep UV LEDs and Current Problems in Material and Device TechnologyM. Shatalov, R. Jain, T. Saxena, A. Dobrinsky and M. Shur3. Growth of High-Quality AlN on Sapphire and Development of AlGaN Based Deep-Ultraviolet Light-Emitting DiodesH. Hirayama4. III-N Wide Bandgap Deep-Ultraviolet Lasers and PhotodetectorsT. Detchprohm, X. Li, S.-C. Shen, P.D. Yoder and R.D. Dupuis5. Al(Ga)N Nanowire Deep Ultraviolet OptoelectronicsS. Zhao and Z. Mi6. Growth and Structural Characterization of Self-Nucleated III-Nitride NanowiresT. Auzelle and B. Daudin7. Selective Area Growth of InGaN/GaN Nanocolumnar Heterostructures by Plasma Assisted Molecular Beam EpitaxyS. Albert, A.M. Bengoechea-Encabo, M.Á. Sánchez-García and E. Calleja8. InN Nanowires: Epitaxial Growth, Characterization, and Device ApplicationsS. Zhao and Z. Mi9. Dynamic Atomic Layer Epitaxy of InN on/in GaN and its Application for Fabricating Ordered Alloys in Whole III-N SystemK. Kusakabe and A. Yoshikawa10. Nitride Semiconductor Nanorod Heterostructures for Full-Color and White-Light ApplicationsS. Gwo, Y.-J. Lu, H.-W. Lin, C.-T. Kuo, C.-L. Wu, M.-Y. Lu and L.-J. Chen11. III-Nitride Electrically Pumped Visible and Near-Infrared Nanowire Lasers on (001) SiliconP. Bhattacharya, A. Hazari, S. Jahangir, W. Guo and T. Frost12. Exploring the Next Phase in Gallium Nitride Photonics: Cubic Phase Light Emitters Hetero-Integrated on SiliconC. Bayram and R. Liu