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High Speed Heterostructure Devices de Albert C. Beer

High Speed Heterostructure Devices: Semiconductors and Semimetals, cartea 41

Albert C. Beer, Eicke R. Weber R. K. Willardson, Richard A. Kiehl, T. C.L. Gerhard Sollner
en Limba Engleză Hardback – 5 iul 1994
Volume 41 includes an in-depth review of the most important, high-speed switches made with heterojunction technology. This volume is aimed at the graduate student or working researcher who needs a broad overview andan introduction to current literature.

  • The first complete review of InP-based HFETs and complementary HFETs, which promise very low power and high speed
  • Offers a complete, three-chapter review of resonant tunneling
  • Provides an emphasis on circuits as well as devices
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Specificații

ISBN-13: 9780127521411
ISBN-10: 0127521410
Pagini: 454
Dimensiuni: 152 x 229 x 27 mm
Greutate: 0.81 kg
Editura: ELSEVIER SCIENCE
Seria Semiconductors and Semimetals

Public țintă

Students, academics, researchers, and libraries. Will have strongest appeal for electrical engineers, semiconductor device engineers, condensed matter physicists, and materials scientists.

Cuprins

F. Capasso, F. Beltram, S. Sen, A. Palevski, and Y.A. Cho, Quantum Electron Devices: Physics and Applications. P. Solomon, D.J. Frank, S.L. Wright, and F. Canora, GaAs-Gate Semiconductor-Insulator-Semiconductor FET.M.M. Hashemi and U.K. Mishra, Unipolar InP-Based Transistors. R.A. Kiehl, Complementary Heterostructure FET Integrated Circuits. T. Ishibashi, GaAs-Based and InP-Based Heterostructure Bipolar Transistors. H.C. Liu and T.C.L.G. Sollner, High Frequency Resonant-Tunneling Devices. H. Ohnishi, T. Mori, M. Takatsu, K. Imamura, and N. Yokoyama, Resonant-Tunneling Hot-Electron Transistors and Circuits. References. Index.