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SiC Materials and Devices: Semiconductors and Semimetals, cartea 52

R. K. Willardson, Eicke R. Weber
en Limba Engleză Hardback – iul 1998
This volume addresses the subject of materials science, specifically the materials aspects, device applications, and fabricating technology of SiC.
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Specificații

ISBN-13: 9780127521602
ISBN-10: 0127521607
Pagini: 420
Dimensiuni: 152 x 229 x 24 mm
Greutate: 0.75 kg
Editura: ELSEVIER SCIENCE
Seria Semiconductors and Semimetals


Public țintă

AUDIENCE: Researchers, graduate students, and practitioners in materials science (electronic materials field) and electrical engineering (field of electronic devices).

Cuprins

K. Jarrendahl and R.F. Davis, Materials Properties and Characterization of SiC. V.A. Dmitriev and M.G. Spencer, SiC Fabrication Technology: Growth and Doping. V. Saxena and A.J. Steckl, Silicon Carbide Materials and Devices. M. Shur, SiC Transistors. C.D. Brandt, R.C. Clarke, R.R. Siergiej, J.B. Casady, and A.W. Morse, SiC for Applications in High Power Electronics. R.J. Trew, SiC Microwave Devices. C. Carter, J. Edmond, H. Kong, G. Negley, M. Leonard, K. Doverspike, W. Weeks, A. Suvorov, and D. Waltz, SiC-Based UV Photodiodes and Light Emitting Diodes. H. Morkoc, Beyond Silicon Carbide! II-V Nitride Based Heterostructures and Devices. Subject Index.