Mid-infrared Optoelectronics: Materials, Devices, and Applications: Woodhead Publishing Series in Electronic and Optical Materials
Editat de Eric Tournié, Laurent Ceruttien Limba Engleză Paperback – 17 oct 2019
This book presents a key reference for materials scientists, engineers and professionals working in R&D in the area of semiconductors and optoelectronics.
- Provides a comprehensive overview of mid-infrared photodetectors and light sources and the latest materials and devices
- Reviews emerging areas of research in the field of mid-infrared optoelectronics, including new materials, such as wide bandgap materials, chalcogenides and new approaches, like heterogeneous integration
- Includes information on the most relevant applications in industry, like gas sensing, spectroscopy and imaging
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Specificații
ISBN-13: 9780081027097
ISBN-10: 0081027095
Pagini: 750
Dimensiuni: 152 x 229 mm
Greutate: 0.99 kg
Editura: ELSEVIER SCIENCE
Seria Woodhead Publishing Series in Electronic and Optical Materials
ISBN-10: 0081027095
Pagini: 750
Dimensiuni: 152 x 229 mm
Greutate: 0.99 kg
Editura: ELSEVIER SCIENCE
Seria Woodhead Publishing Series in Electronic and Optical Materials
Public țintă
Materials Scientists and Engineers in Academia and R&DCuprins
Part One - Fundamentals
1. The physics of mid-infrared semiconductor materials and heterostructures
Part Two - Light sources
2. Mid-infrared light-emitting diodes
3. Interband mid-infrared lasers
4. Quantum cascade lasers
5. High-brightness quantum cascade lasers
6. Mid-infrared frequency conversion in quasiphase matched semiconductors
Part Three - Photodetectors
7. HgCdTe photodetectors
8. Quantum cascade detectors: A review
9. InAs/GaSb type II superlattices: A developing material system for third generation of IR imaging
10. InAsSb-based photodetectors
Part Four - New approaches
11. Dilute bismide and nitride alloys for mid-IR optoelectronic devices
12. Group IV photonics using (Si)GeSn technology toward mid-IR applications
13. Intersubband transitions in GaN-based heterostructures
14. III–V/Si mid-IR photonic integrated circuits
Part Five - Application of mid-IR devices
15. Quartz-enhanced photoacoustic spectroscopy for gas sensing applications
16. Mid-infrared gas-sensing systems and applications
1. The physics of mid-infrared semiconductor materials and heterostructures
Part Two - Light sources
2. Mid-infrared light-emitting diodes
3. Interband mid-infrared lasers
4. Quantum cascade lasers
5. High-brightness quantum cascade lasers
6. Mid-infrared frequency conversion in quasiphase matched semiconductors
Part Three - Photodetectors
7. HgCdTe photodetectors
8. Quantum cascade detectors: A review
9. InAs/GaSb type II superlattices: A developing material system for third generation of IR imaging
10. InAsSb-based photodetectors
Part Four - New approaches
11. Dilute bismide and nitride alloys for mid-IR optoelectronic devices
12. Group IV photonics using (Si)GeSn technology toward mid-IR applications
13. Intersubband transitions in GaN-based heterostructures
14. III–V/Si mid-IR photonic integrated circuits
Part Five - Application of mid-IR devices
15. Quartz-enhanced photoacoustic spectroscopy for gas sensing applications
16. Mid-infrared gas-sensing systems and applications