Nanowire Field Effect Transistors: Principles and Applications
Editat de Dae Mann Kim, Yoon-Ha Jeongen Limba Engleză Paperback – 23 aug 2016
During this discussion, the photo-diode, solar cell, LED, LD, DRAM, flash EEPROM and sensors are highlighted to pave the way for similar applications of NWFET. Modeling is discussed in close analogy and comparison with MOSFETs. Contributors focus on processing, electrostatic discharge (ESD) and application of NWFET. This includes coverage of solar and memory cells, biological and chemical sensors, displays and atomic scale light emitting diodes.
Appropriate for scientists and engineers interested in acquiring a working knowledge of NWFET as well as graduate students specializing in this subject.
Toate formatele și edițiile | Preț | Express |
---|---|---|
Paperback (1) | 677.04 lei 43-57 zile | |
Springer – 23 aug 2016 | 677.04 lei 43-57 zile | |
Hardback (1) | 626.49 lei 43-57 zile | |
Springer – 23 oct 2013 | 626.49 lei 43-57 zile |
Preț: 677.04 lei
Preț vechi: 796.52 lei
-15% Nou
Puncte Express: 1016
Preț estimativ în valută:
129.58€ • 135.06$ • 107.87£
129.58€ • 135.06$ • 107.87£
Carte tipărită la comandă
Livrare economică 06-20 ianuarie 25
Preluare comenzi: 021 569.72.76
Specificații
ISBN-13: 9781493945726
ISBN-10: 1493945726
Pagini: 296
Ilustrații: VI, 290 p. 196 illus., 98 illus. in color.
Dimensiuni: 155 x 235 x 16 mm
Greutate: 0.42 kg
Ediția:Softcover reprint of the original 1st ed. 2014
Editura: Springer
Colecția Springer
Locul publicării:New York, NY, United States
ISBN-10: 1493945726
Pagini: 296
Ilustrații: VI, 290 p. 196 illus., 98 illus. in color.
Dimensiuni: 155 x 235 x 16 mm
Greutate: 0.42 kg
Ediția:Softcover reprint of the original 1st ed. 2014
Editura: Springer
Colecția Springer
Locul publicării:New York, NY, United States
Cuprins
Quantum Wire and Sub-Bands.- Carrier Concentration and Transport.- P-N Junction Diode: I-V Behavior and Applications.- Silicon Nanowire Field Effect Transistor.- Fabrication of Nanowires and their Applications.- Characterization of Nanowire Devices under Electrostatic Discharge Stress Conditions.- Green Energy Devices.- Nanowire Field Effect Transistors in Optoelectronics.- Nanowire BioFETs: An Overview.- Lab On a Wire: Application of Silicon Nanowires for Nanoscience and Biotechnology.- Nanowire FET Circuit Design – An Overview.
Textul de pe ultima copertă
“Nanowire Field Effect Transistor: Basic Principles and Applications” places an emphasis on the application aspects of nanowire field effect transistors (NWFET). Device physics and electronics are discussed in a compact manner, together with the p-n junction diode and MOSFET, the former as an essential element in NWFET and the latter as a general background of the FET.
During this discussion, the photo-diode, solar cell, LED, LD, DRAM, flash EEPROM and sensors are highlighted to pave the way for similar applications of NWFET. Modeling is discussed in close analogy and comparison with MOSFETs. Contributors focus on processing, electrostatic discharge (ESD) and application of NWFET. This includes coverage of solar and memory cells, biological and chemical sensors, displays and atomic scale light emitting diodes.
Appropriate for scientists and engineers interested in acquiring a working knowledge of NWFET as well as graduate students specializing in this subject.
During this discussion, the photo-diode, solar cell, LED, LD, DRAM, flash EEPROM and sensors are highlighted to pave the way for similar applications of NWFET. Modeling is discussed in close analogy and comparison with MOSFETs. Contributors focus on processing, electrostatic discharge (ESD) and application of NWFET. This includes coverage of solar and memory cells, biological and chemical sensors, displays and atomic scale light emitting diodes.
Appropriate for scientists and engineers interested in acquiring a working knowledge of NWFET as well as graduate students specializing in this subject.
Caracteristici
Covers the basic physics and electronics leading to the conceptual understanding of NWFET and its practical aspects Provides modeling of NWFET in analogy and comparison with the well known MOSFET modeling, so that NWFET can be comprehended in the context of device evolution Discusses mainstream applications and emphasizes their basic concepts