Optical Constants of Crystalline and Amorphous Semiconductors: Numerical Data and Graphical Information
Autor Sadao Adachien Limba Engleză Hardback – 31 aug 1999
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Specificații
ISBN-13: 9780792385677
ISBN-10: 0792385675
Pagini: 714
Ilustrații: XX, 714 p.
Dimensiuni: 155 x 235 x 38 mm
Greutate: 1.14 kg
Ediția:1999
Editura: Springer Us
Colecția Springer
Locul publicării:New York, NY, United States
ISBN-10: 0792385675
Pagini: 714
Ilustrații: XX, 714 p.
Dimensiuni: 155 x 235 x 38 mm
Greutate: 1.14 kg
Ediția:1999
Editura: Springer Us
Colecția Springer
Locul publicării:New York, NY, United States
Public țintă
ResearchCuprins
Introductory Remarks.- References.- A Group-VI Semiconductors.- A1 Diamond (C).- A2 Silicon (Si).- A3 Germanium (Ge).- A4 Gray Tin (?-Sn).- A5 Cubic Silicon Carbide (3C-SiC).- A6 Hexagonal Silicon Carbide (2H-, 4H-, and 6H-SiC).- A7 Rhombohedral Silicon Carbide (15R-SiC).- A8 Silicon-Germanium Alloy (Six/Ge1-x).- A9 Carbon-Incorporated Alloys (Si1-xC1-x, Si1-x-yGexCy, etc.).- B III-V Binary Semiconductors.- B1 Cubic Boron Nitride (c-BN).- B2 Hexagonal Boron Nitride (h-BN).- B3 Boron Phosphide (BP).- B4 Boron Arsenide (BAs).- B5 Aluminium Nitride (A1N).- B6 Aluminium Phosphide (AIP).- B7 Aluminium Arsenide (AlAs).- B8 Aluminium Antimonide (AlSb).- B9 Wurtzite Gallium Nitride (?-GaN).- B10 Cubic Gallium Nitride (ß-GaN).- B11 Gallium Phosphide (GaP).- B12 Gallium Arsenide (GaAs).- B13 Gallium Antimonide (GaSb).- B14 Indium Nitride (InN).- B15 Indium Phosphide (InP).- B16 Indium Arsenide (InAs).- B17 Indium Antimonide (InSb).- C III-V Alloy Semiconductors.- C1 General Remarks.- C2 Ternary Alloys.- C3 Quaternary Alloys.- D II–VI Semiconductors.- D1 Magnesium Oxide (MgO).- D2 Zinc Oxide (ZnO).- D3 Wurtzite Zinc Sulphide (?-ZnS).- D4 Cubic Zinc Sulphide (ß-ZnS).- D5 Zinc Selenide (ZnSe).- D6 Zinc Telluride (ZnTe).- D7 Cubic Cadmium Sulphide (c-CdS).- D8 Wurtzite Cadmium Sulphide (w-CdS).- D9 Cubic Cadmium Selenide (c-CdSe).- D10 Wurtzite Cadmium Selenide (w-CdSe).- D11 Cadmium Telluride (CdTe).- D12 Mercury Selenide (HgSe).- D13 Mercury Telluride (HgTe).- D14 Magnesium Cadmium Telluride (MgxCd1-xTe).- D15 Zinc Cadmium Selenide (ZnxCd1-xSe).- D16 Zinc Cadmium Telluride (ZnxCd1-xTe).- D17 Zinc Sulpho-Selenide (ZnSxSe1-x).- D18 Zinc Seleno-Telluride (ZnSexTe1-x).- D19 Cadmium Sulpho-Selenide (CdSxSe1-x).- D20 Mercury Zinc Telluride (Hg1-xZnxTe).- D21 Mercury CadmiumSelenide (Hg1-xCdxSe).- D22 Mercury Cadmium Telluride (Hg1-xCdxTe).- D23 Zinc-Based Semimagnetic Ternary Alloys (Zn1-xMnxS, Zn1-xMnxSe, etc.).- D24 Cadmium-Based Semimagnetic Ternary Alloys (Cd1-xMnxSe, Cd1-xMnx.Te, etc.).- D25 Quaternary Alloys (Zn1-xMgxSySe1-y and MgxZnyCd1-x-ySe).- E IV-VI Semiconductors.- E1 Lead Sulphide (PbS).- E2 Lead Selenide (PbSe).- E3 Lead Telluride (PbTe).- E4 Tin Telluride (SnTe).- E5 Lead Tin Selenide (Pb1-xSnxSe).- E6 Lead Tin Telluride (Pb1-xSnxTe).- F Amorphous Semiconductors.- F1 a-Diamond-Like Carbon (a-DLC).- F2 a-Silicon (a-Si).- F3 a-Germanium (a-Ge).- F4 a-Silicon–Carbon (a-Si1-x Cx).- F5 a-Gallium Phosphide (a-GaP).- F6 a-Gallium Arsenide (a-GaAs).- F7 a-Gallium Antimonide (a-GaSb).- F8 a-Indium Phosphide (a-InP).- F9 a-Indium Arsenide (a-InAs).- F10 a-Indium Antimonide (a-InSb).