Photo-induced Defects in Semiconductors: Cambridge Studies in Semiconductor Physics and Microelectronic Engineering, cartea 4
Autor David Redfield, Richard H. Bubeen Limba Engleză Paperback – 8 mar 2006
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Specificații
ISBN-13: 9780521024457
ISBN-10: 0521024455
Pagini: 232
Ilustrații: 106 b/w illus.
Dimensiuni: 152 x 229 x 14 mm
Greutate: 0.35 kg
Editura: Cambridge University Press
Colecția Cambridge University Press
Seria Cambridge Studies in Semiconductor Physics and Microelectronic Engineering
Locul publicării:Cambridge, United Kingdom
ISBN-10: 0521024455
Pagini: 232
Ilustrații: 106 b/w illus.
Dimensiuni: 152 x 229 x 14 mm
Greutate: 0.35 kg
Editura: Cambridge University Press
Colecția Cambridge University Press
Seria Cambridge Studies in Semiconductor Physics and Microelectronic Engineering
Locul publicării:Cambridge, United Kingdom
Cuprins
1. Introduction: metastable defects; 2. III–V compounds: DX2 and EL2 centers; 3. Other crystalline materials; 4. Hydrogenated amorphous silicon: properties of defects; 5. Hydrogenated amorphous silicon: photo-induced defect kinetics and processes; 6. Other amorphous semiconductors; 7. Photo-induced defect effects in devices; References; Index.
Recenzii
'The authors give an excellent account of all the basic research undertaken in the area of defects in semiconductors particularly during the last 15 years. They assume that the reader has some basic knowledge of semiconductor physics. The text is presented in a very readable style and it contains over 100 figures. The book should be of direct interest to those scientists actively engaged in both fundamental and applied semiconductor physics. It is very readable and is of a high standard throughout.' C. A. Bates, Contemporary Physics
Descriere
A thorough review of the properties of deep-level, localized defects in semiconductors.