Relationship Between Structure and Magnetic Behaviour in ZnO-Based Systems: Springer Theses
Autor Clara Guglieri Rodríguezen Limba Engleză Hardback – 12 iun 2015
Further results presented here include O K-edge XMCD studies, which demonstrate that the oxygen ions have a ferromagnetic response in these ZnO-based systems, providing the first direct support for claims regarding the appearance of oxygen ferromagnetism in oxide semiconductors at the nanoscale.
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Specificații
ISBN-13: 9783319188867
ISBN-10: 3319188860
Pagini: 146
Ilustrații: XIV, 146 p. 104 illus., 52 illus. in color.
Dimensiuni: 155 x 235 x 15 mm
Greutate: 0.4 kg
Ediția:2015
Editura: Springer International Publishing
Colecția Springer
Seria Springer Theses
Locul publicării:Cham, Switzerland
ISBN-10: 3319188860
Pagini: 146
Ilustrații: XIV, 146 p. 104 illus., 52 illus. in color.
Dimensiuni: 155 x 235 x 15 mm
Greutate: 0.4 kg
Ediția:2015
Editura: Springer International Publishing
Colecția Springer
Seria Springer Theses
Locul publicării:Cham, Switzerland
Public țintă
ResearchCuprins
Introduction.- Synthesis and In-House Characterization.- XAS and XMCD Spectroscopies.- Zinc K-Edge X-Ray Absorption Study.- Zinc K-Edge XMCD Study.- Soft X-Ray XAS and XMCD Study.- Summary and Conclusions.- Appendices.- Bibliography.
Textul de pe ultima copertă
This work studies the magnetic behavior of ZnO nanoparticles capped with different organic molecules and showing room-temperature ferromagnetism (RTFM). Of particular significance is the combination of element-specific X-ray absorption spectroscopy (XAS) and X-ray magnetic circular dichroism (XMCD) techniques, which demonstrates the intrinsic occurrence of RTFM in these systems and indicates that it is not related to the 3-D states of the metallic cation but is relayed along the conduction band of the semiconductor. The discovery of room-temperature ferromagnetism (RTFM) in semiconductors holds great promise in future spintronics technologies.
Further results presented here include O K-edge XMCD studies, which demonstrate that the oxygen ions have a ferromagnetic response in these ZnO-based systems, providing the first direct support for claims regarding the appearance of oxygen ferromagnetism in oxide semiconductors at the nanoscale.
Further results presented here include O K-edge XMCD studies, which demonstrate that the oxygen ions have a ferromagnetic response in these ZnO-based systems, providing the first direct support for claims regarding the appearance of oxygen ferromagnetism in oxide semiconductors at the nanoscale.
Caracteristici
Nominated as an outstanding Ph.D. thesis by the University of Zaragoza, Spain Proves the intrinsic nature of the high-temperature ferromagnetism found in ZnO semiconductor materials and its relationship to structural properties Provides direct support for the occurrence of oxygen ferromagnetism in oxide semiconductors Includes supplementary material: sn.pub/extras