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Strain-Induced Effects in Advanced MOSFETs de Viktor Sverdlov

Strain-Induced Effects in Advanced MOSFETs: Computational Microelectronics

Autor Viktor Sverdlov
en Limba Engleză Hardback – 24 noi 2010
Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given.
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Specificații

ISBN-13: 9783709103814
ISBN-10: 3709103819
Pagini: 268
Ilustrații: XIV, 252 p.
Greutate: 0.64 kg
Ediția:2011
Editura: SPRINGER VIENNA
Colecția Springer
Seria Computational Microelectronics

Locul publicării:Vienna, Austria

Public țintă

Research

Cuprins

1 Introduction2 Scaling, Power Consumption, and Mobility Enhancement Techniques3 Strain and Stress4 Basic Properties of the Silicon Lattice5 Band Structure of Relaxed Silicon6 Perturbative Methods for Band Structure Calculations in Silicon7 Strain Effects on the Silicon Crystal Structure8 Strain Effects on the Silicon Band Structure9 Strain Effects on the Conduction Band of Silicon10 Electron Subbands in Silicon in the Effective Mass Approximation11 Electron Subbands in Thin Silicon Films12 Demands of Transport Modeling in Advanced MOSFETs

Textul de pe ultima copertă

Strain is used to boost performance of MOSFETs. Modeling of strain effectson transport is an important task of modern simulation tools required fordevice design. The book covers all relevant modeling approaches used todescribe strain in silicon. The subband structure in stressed semiconductorfilms is investigated in devices using analytical k.p and numerical pseudopotentialmethods. A rigorous overview of transport modeling in straineddevices is given

Caracteristici

comprehensive overview of strain techniques accurate description of strain induced modifications of the valence and conduction bands overview of transport modeling in strain devices Includes supplementary material: sn.pub/extras