Strain-Induced Effects in Advanced MOSFETs: Computational Microelectronics
Autor Viktor Sverdloven Limba Engleză Hardback – 24 noi 2010
Toate formatele și edițiile | Preț | Express |
---|---|---|
Paperback (1) | 925.84 lei 6-8 săpt. | |
SPRINGER VIENNA – 23 aug 2016 | 925.84 lei 6-8 săpt. | |
Hardback (1) | 932.79 lei 6-8 săpt. | |
SPRINGER VIENNA – 24 noi 2010 | 932.79 lei 6-8 săpt. |
Din seria Computational Microelectronics
- 18% Preț: 925.37 lei
- 20% Preț: 438.50 lei
- 18% Preț: 935.12 lei
- 15% Preț: 633.06 lei
- 18% Preț: 932.62 lei
- 15% Preț: 625.20 lei
- 15% Preț: 629.52 lei
- 18% Preț: 935.12 lei
- Preț: 382.24 lei
- Preț: 379.22 lei
- Preț: 389.39 lei
- 20% Preț: 652.92 lei
- Preț: 385.07 lei
- 24% Preț: 742.68 lei
- 18% Preț: 1804.90 lei
- 15% Preț: 572.46 lei
Preț: 932.79 lei
Preț vechi: 1137.55 lei
-18% Nou
Puncte Express: 1399
Preț estimativ în valută:
178.52€ • 185.43$ • 148.28£
178.52€ • 185.43$ • 148.28£
Carte tipărită la comandă
Livrare economică 03-17 februarie 25
Preluare comenzi: 021 569.72.76
Specificații
ISBN-13: 9783709103814
ISBN-10: 3709103819
Pagini: 268
Ilustrații: XIV, 252 p.
Greutate: 0.64 kg
Ediția:2011
Editura: SPRINGER VIENNA
Colecția Springer
Seria Computational Microelectronics
Locul publicării:Vienna, Austria
ISBN-10: 3709103819
Pagini: 268
Ilustrații: XIV, 252 p.
Greutate: 0.64 kg
Ediția:2011
Editura: SPRINGER VIENNA
Colecția Springer
Seria Computational Microelectronics
Locul publicării:Vienna, Austria
Public țintă
ResearchCuprins
1 Introduction2 Scaling, Power Consumption, and Mobility Enhancement Techniques3 Strain and Stress4 Basic Properties of the Silicon Lattice5 Band Structure of Relaxed Silicon6 Perturbative Methods for Band Structure Calculations in Silicon7 Strain Effects on the Silicon Crystal Structure8 Strain Effects on the Silicon Band Structure9 Strain Effects on the Conduction Band of Silicon10 Electron Subbands in Silicon in the Effective Mass Approximation11 Electron Subbands in Thin Silicon Films12 Demands of Transport Modeling in Advanced MOSFETs
Textul de pe ultima copertă
Strain is used to boost performance of MOSFETs. Modeling of strain effectson transport is an important task of modern simulation tools required fordevice design. The book covers all relevant modeling approaches used todescribe strain in silicon. The subband structure in stressed semiconductorfilms is investigated in devices using analytical k.p and numerical pseudopotentialmethods. A rigorous overview of transport modeling in straineddevices is given
Caracteristici
comprehensive overview of strain techniques accurate description of strain induced modifications of the valence and conduction bands overview of transport modeling in strain devices Includes supplementary material: sn.pub/extras