Hierarchical Device Simulation: The Monte-Carlo Perspective: Computational Microelectronics
Autor Christoph Jungemann, Bernd Meinerzhagenen Limba Engleză Hardback – 5 iun 2003
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Specificații
ISBN-13: 9783211013618
ISBN-10: 321101361X
Pagini: 284
Ilustrații: XVI, 261 p.
Dimensiuni: 155 x 235 x 21 mm
Greutate: 0.58 kg
Ediția:2003
Editura: SPRINGER VIENNA
Colecția Springer
Seria Computational Microelectronics
Locul publicării:Vienna, Austria
ISBN-10: 321101361X
Pagini: 284
Ilustrații: XVI, 261 p.
Dimensiuni: 155 x 235 x 21 mm
Greutate: 0.58 kg
Ediția:2003
Editura: SPRINGER VIENNA
Colecția Springer
Seria Computational Microelectronics
Locul publicării:Vienna, Austria
Public țintă
ResearchCuprins
1 Introduction.- References.- 2 Semiclassical Transport Theory.- 2.1 The Boltzmann Transport Equation.- 2.2 Balance Equations.- 2.3 The Microscopic Relaxation Time.- 2.4 Fluctuations in the Steady-State 25 References.- 3 The Monte-Carlo Method.- 3.1 Basic Monte-Carlo Methods.- 3.2 The Monte-Carlo Solver of the Boltzmann Equation.- 3.3 Velocity Autocorrelation Function.- 3.4 Basic Statistics.- 3.5 Convergence Estimation.- References.- 4 Scattering Mechanisms.- 4.1 Phonon Scattering.- 4.2 Alloy Scattering.- 4.3 Impurity Scattering.- 4.4 Impact Ionization by Electrons.- 4.5 Surface Roughness Scattering.- References.- 5 Full-Band Structure.- 5.1 Basic Properties of the Band Structure of Relaxed Silicon.- 5.2 Basic Properties of the Band Structure of Strained SiGe.- 5.3 k-Space Grid.- 5.4 Calculation of the Density of States.- 5.5 Mass Tensor Evaluation.- 5.6 Particle Motion in Phase-Space.- 5.7 Selection of a Final State in k-Space.- References.- 6 Device Simulation.- 6.1 Device Discretization.- 6.2 Band Edges.- 6.3 Poisson Equation.- 6.4 Self-Consistent Device Simulation.- 6.5 Nonlinear Poisson Equation.- 6.6 Nonself-Consistent Device Simulation.- 6.7 Statistical Enhancement.- 6.8 Terminal Current Estimation.- 6.9 Contact Resistance.- 6.10 Normalization of Physical Quantities.- References.- 7 Momentum-Based Transport Models.- 7.1 The Hydrodynamic Model.- 7.2 Small-Signal Analysis.- 7.3 Noise Analysis.- 7.4 The Drift-Diffusion Model.- 7.5 Transport and Noise Parameter Simulation.- References.- 8 Stochastic Properties of Monte-Carlo Device Simulations.- 8.1 Stochastic Error.- 8.2 In-Advance CPU Time Estimation.- References.- 9 Results.- 9.1 N+NN+ and P+PP+ Structures.- 9.2 MOSFETs.- 9.3 SiGe HBTs.- References.
Caracteristici
First monograph on physics-based simulations of novel strained Si and SiGe devices In-depth description of the full-band monte-carlo method for SiGe Comprehensive description of the momentum-based and monte-carlo models is given