Cantitate/Preț
Produs
Total produse
Vezi coșul
The Monte Carlo Method for Semiconductor Device Simulation de Carlo Jacoboni

The Monte Carlo Method for Semiconductor Device Simulation: Computational Microelectronics

Autor Carlo Jacoboni, Paolo Lugli
en Limba Engleză Hardback – 30 oct 1989
The application of the Monte Carlo method to the simulation of semiconductor devices is presented. A review of the physics of transport in semiconductors is given, followed by an introduction to the physics of semiconductor devices. The Monte Carlo algorithm is discussed in great details, and specific applications to the modelling of semiconductor devices are given. A comparison with traditional simulators is also presented.
Citește tot Restrânge

Toate formatele și edițiile

Toate formatele și edițiile Preț Express
Paperback (1) 92094 lei  6-8 săpt.
  SPRINGER VIENNA – 5 oct 2011 92094 lei  6-8 săpt.
Hardback (1) 92707 lei  6-8 săpt.
  SPRINGER VIENNA – 30 oct 1989 92707 lei  6-8 săpt.

Din seria Computational Microelectronics

  • 20% Compact Transistor Modelling for Circuit Design
    Preț: 43849 lei
  • 18% Computational Single-Electronics
    Preț: 91740 lei
  • 15% Hierarchical Device Simulation: The Monte-Carlo Perspective
    Preț: 62762 lei
  • 18% Analysis and Simulation of Heterostructure Devices
    Preț: 92460 lei
  • 18% Strain-Induced Effects in Advanced MOSFETs
    Preț: 92477 lei
  • 15% Deterministic Solvers for the Boltzmann Transport Equation
    Preț: 61984 lei
  • 15% The Stationary Semiconductor Device Equations
    Preț: 62411 lei
  • 18% Advanced Physical Models for Silicon Device Simulation
    Preț: 92707 lei
  • The Drift Diffusion Equation and Its Applications in MOSFET Modeling
    Preț: 37899 lei
  • Modelling of Interface Carrier Transport for Device Simulation
    Preț: 37597 lei
  • Microtransducer CAD: Physical and Computational Aspects
    Preț: 38607 lei
  • 20% MOSFET Models for VLSI Circuit Simulation: Theory and Practice
    Preț: 64730 lei
  • Multigrid Methods for Process Simulation
    Preț: 38178 lei
  • 24% The Non-Equilibrium Green's Function Method for Nanoscale Device Simulation
    Preț: 74265 lei
  • 18% Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon
    Preț: 178932 lei
  • 15% Modelling of Interface Carrier Transport for Device Simulation
    Preț: 56754 lei

Preț: 92707 lei

Preț vechi: 113057 lei
-18% Nou

Puncte Express: 1391
Preț estimativ în valută:
17743€ • 18718$ • 14786£

Carte tipărită la comandă

Livrare economică 03-17 ianuarie 25

 Adaugă în coș

Wish list
Gift list
Am citit!
Adaugă în listă
Preluare comenzi: 021 569.72.76

Specificații

ISBN-13: 9783211821107
ISBN-10: 3211821104
Pagini: 376
Ilustrații: X, 359 p.
Dimensiuni: 156 x 234 x 26 mm
Greutate: 0.7 kg
Ediția:1989
Editura: SPRINGER VIENNA
Colecția Springer
Seria Computational Microelectronics

Locul publicării:Vienna, Austria

Public țintă

Research

Cuprins

1 Introduction.- References.- 2 Charge Transport in Semiconductors.- 2.1 Electron Dynamics.- 2.2 Energy Bands.- 2.3 Scattering Mechanisms.- 2.4 Scattering Probabilities.- 2.5 Transport Equation.- 2.6 Linear Response and the Relaxation Time Approximation.- 2.7 Diffusion, Noise, and Velocity Autocorrelation Function.- 2.8 Hot Electrons.- 2.9 Transient Transport.- 2.10 The Two-dimensional Electron Gas.- References.- 3 The Monte Carlo Simulation.- 3.1 Fundamentals.- 3.2 Definition of the Physical System.- 3.3 Initial Conditions.- 3.4 The Free Flight, Self Scattering.- 3.5 The Scattering Process.- 3.6 The Choice of the State After Scattering.- 3.7 Collection of Results for Steady-State Phenomena.- 3.8 The Ensemble Monte Carlo (EMC).- 3.9 Many Particle Effects.- 3.10 Monte Carlo Simulation of the 2DEG.- 3.11 Special Topics.- 3.12 Variance-reducing Techniques.- 3.13 Comparison with Other Techniques.- References.- 4 Review of Semiconductor Devices.- 4.1 Introduction.- 4.2 Historical Evolution of Semiconductor Devices.- 4.3 Physical Basis of Semiconductor Devices.- 4.4 Comparison of Semiconductor Devices.- References.- 5 Monte Carlo Simulation of Semiconductor Devices.- 5.1 Introduction.- 5.2 Geometry of the System.- 5.3 Particle-Mesh Force Calculation.- 5.4 Poisson Solver and Field Distribution.- 5.5 The Monte Carlo Simulation of Semiconductor Devices.- References.- 6 Applications.- 6.1 Introduction.- 6.2 Diodes.- 6.3 MESFET.- 6.4 HEMT and Heterojunction Real Space Transfer Devices.- 6.5 Bipolar Transistor.- 6.6 HBT.- 6.7 MOSFET and MISFET.- 6.8 Hot Electron Transistors.- 6.9 Permeable Base Transistor.- 6.10 Comparison with Traditional Simulators.- References.- Appendix A. Numerical Evaluation of Some Integrals of Interest.- References.- Appendix B. Generation of Random Numbers.- References.