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Arbitrary Modeling of TSVs for 3D Integrated Circuits de Khaled Salah

Arbitrary Modeling of TSVs for 3D Integrated Circuits: Analog Circuits and Signal Processing

Autor Khaled Salah, Yehea Ismail, Alaa El-Rouby
en Limba Engleză Hardback – 5 sep 2014
This book presents a wide-band and technology independent, SPICE-compatible RLC model for through-silicon vias (TSVs) in 3D integrated circuits. This model accounts for a variety of effects, including skin effect, depletion capacitance and nearby contact effects. Readers will benefit from in-depth coverage of concepts and technology such as 3D integration, Macro modeling, dimensional analysis and compact modeling, as well as closed form equations for the through silicon via parasitics. Concepts covered are demonstrated by using TSVs in applications such as a spiral inductor and inductive-based communication system and bandpass filtering.
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Specificații

ISBN-13: 9783319076102
ISBN-10: 3319076108
Pagini: 271
Ilustrații: IX, 179 p. 159 illus., 99 illus. in color.
Dimensiuni: 155 x 235 x 20 mm
Greutate: 0.45 kg
Ediția:2015
Editura: Springer International Publishing
Colecția Springer
Seria Analog Circuits and Signal Processing

Locul publicării:Cham, Switzerland

Public țintă

Research

Cuprins

Introduction: Work around Moore’s Law.- 3D/TSV Enabling Technologies.- TSV Modeling and Analysis.- TSV Verification.- TSV Macro-Modeling Framework.- TSV Design Applications: TSV-Based On-Chip Spiral Inductor, TSV-Based On-Chip Wireless Communications and TSV-Based Bandpass Filter.- Imperfection in TSV Modeling.- New Trends in TSV.- TSV Fabrication.- Conclusions.

Textul de pe ultima copertă

This book presents a wide-band and technology independent, SPICE-compatible RLC model for through-silicon vias (TSVs) in 3D integrated circuits. This model accounts for a variety of effects, including skin effect, depletion capacitance, and nearby contact effects.  Readers will benefit from in-depth coverage of concepts and technology such as 3D integration, Macro modeling, dimensional analysis, and compact modeling, as well as closed form equations for the through silicon via parasitics. Concepts covered are demonstrated by using TSVs in applications such as a spiral inductor,  and inductive-based communication system, and bandpass filtering.
·Introduces a robust model that captures accurately all the loss modes of a TSV,  coupling parasitics between TSVs and the TSV nonlinear capacitance and resistance of the depletion region;
·Enables readers to use a model which is technology dependent and can be used for any TSV configuration;
·Reveals a novel on-chip wireless communication technique, based on TSV spiral inductors;
·Equips readers for fast parasitic extraction of TSVs for 3D IC design.

Caracteristici

Introduces a robust model that captures accurately all the loss modes of a TSV, coupling parasitics between TSVs and the TSV nonlinear capacitance and resistance of the depletion region Enables readers to use a model which is technology dependent and can be used for any TSV configuration Reveals a novel on-chip wireless communication technique, based on TSV spiral inductors Equips readers for fast parasitic extraction of TSVs for 3D IC design Includes supplementary material: sn.pub/extras