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Characterization of Terahertz Emission from High Resistivity Fe-doped Bulk Ga0.69In0.31As Based Photoconducting Antennas: Springer Theses

Autor Suranjana Sengupta
en Limba Engleză Hardback – 11 mar 2011
Terahertz science and technology is attracting great interest due to its application in a wide array of fields made possible by the development of new and improved terahertz radiation sources and detectors. This book focuses on the development and characterization of one such source - namely the semi-large aperture photoconducting (PC) antenna fabricated on Fe-doped bulk Ga0.69In0.31As substrate. The high ultrafast carrier mobility, high resistivity, and subpicosecond carrier lifetime along with low bandgap make Ga0.69In0.31As an excellent candidate for PC antenna based THz emitter that can be photoexcited by compact Yb-based multiwatt laser systems for high power THz emission. The research is aimed at evaluating the impact of physical properties of a semi-large aperture Ga0.69In0.31As PC antenna upon its THz generation efficiency, and is motivated by the ultimate goal of developing a high-power terahertz radiation source for time-domain terahertz spectroscopy and imaging systems.
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Specificații

ISBN-13: 9781441981974
ISBN-10: 1441981977
Pagini: 105
Ilustrații: X, 78 p.
Dimensiuni: 155 x 235 x 6 mm
Greutate: 0.32 kg
Ediția:2011
Editura: Springer
Colecția Springer
Seria Springer Theses

Locul publicării:New York, NY, United States

Public țintă

Research

Cuprins

Introduction.- Generation of Picosecond Terahertz pulses.- Ultrafast Spectroscopy.- Experimental Techniques.- Experimental Results.- Conclusions and Future Outlook.

Notă biografică

Suranjana Sengupta, Intel Corporation, suranjana.sengupta@intel.com

Textul de pe ultima copertă

Terahertz science and technology is attracting great interest due to its application in a wide array of fields made possible by the development of new and improved terahertz radiation sources and detectors. This book focuses on the development and characterization of one such source - namely the semi-large aperture photoconducting (PC) antenna fabricated on Fe-doped bulk Ga0.69In0.31As substrate. The high ultrafast carrier mobility, high resistivity, and subpicosecond carrier lifetime along with low bandgap make Ga0.69In0.31As an excellent candidate for PC antenna based THz emitter that can be photoexcited by compact Yb-based multiwatt laser systems for high power THz emission. The research is aimed at evaluating the impact of physical properties of a semi-large aperture Ga0.69In0.31As PC antenna upon its THz generation efficiency, and is motivated by the ultimate goal of developing a high-power terahertz radiation source for time-domain terahertz spectroscopy and imaging systems.
This Doctoral Thesis has been accepted by Rensselaer Polytechnic Institute, Troy, USA.

Caracteristici

Nominated as an outstanding contribution by Rensselaer Polytechnic Institute Presents current THz research in a single source in full depth Includes brand new, original research and important breakthroughs in THz emitter material development Includes supplementary material: sn.pub/extras