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Compound Semiconductors for Energy Applications and Environmental Sustainability — 2011: Volume 1324: MRS Proceedings

Editat de L. Douglas Bell, F. Shahedipour-Sandvik, Kenneth A. Jones, Daniel Schaadt, Blake S. Simpkins, Miguel A. Contreras
en Limba Engleză Hardback – 20 noi 2011
Symposium D, 'Compound Semiconductors for Energy Applications and Environmental Sustainability', was held at the 2011 MRS Spring Meeting April 25-29 in San Francisco, California. Compound semiconductors have long been an integral part of everyday life. Many of these semiconductors exhibit direct band gaps that are tailorable over a wide range of energy. This property can be leveraged for many energy-related applications such as efficient lighting, high-efficiency solar cells and efficient switching. Recent progress on their potential as emitters, sensing devices in biological and chemical environments, and high-efficiency power devices demonstrates their impact on conservation of energy and environment and on mitigation of climate change. This volume contains reports from internationally-known experts on the state of compound semiconductor-based devices with applications to environmental conservation and energy use reduction, challenges associated with realization of such devices and obstacles to their widespread use.
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Specificații

ISBN-13: 9781605113012
ISBN-10: 1605113018
Pagini: 178
Ilustrații: 98 b/w illus. 21 tables
Dimensiuni: 152 x 229 x 11 mm
Greutate: 0.41 kg
Editura: Materials Research Society
Colecția Materials Research Society
Seria MRS Proceedings

Locul publicării:Warrendale, Pittsburgh, United States

Cuprins

Part I. Nitrides: 1. Indium gallium nitride on germanium by molecular beam epitaxy Ruben Lieten; 2. Crack-free III-nitride structures (> 3.5 µm) on silicon Mihir Tungare; 3. Comparison of aluminum nitride nanowire growth with and without catalysts via chemical vapor deposition Kasif Teker; 4. Enhanced light emission at self-assembled GaN inversion domain boundary Yuh-Jen Cheng; 5. AlGaN channel HEMT with extremely high breakdown voltage Takuma Nanjo; 6. Fabrication and optical properties of green emission semipolar {10-11} InGaN/GaN MQWs selective grown on GaN nanopyramid arrays Shih-Pang Chang; Part II. CdTe/CdS: 7. Morphology control of copper indium disulfide nanocrystals Marta Kruszynska; 8. Comparative study in thin-film CdTe solar cells with ZnSe/TCO and CdS/TCO buffer layers Tamara Potlog; 9. Influence of surface preparation on scanning Kelvin probe microscopy and electron backscatter diffraction analysis of cross sections of CdTe/CdS solar cells Helio Moutinho; 10. CdSxTe1-x alloying in CdS/CdTe solar cells Joel Duenow; 11. Influence of annealing in H2 atmosphere on the electrical properties of thin film CdS Jaan Hiie; Part III. CIGS/CIS: 12. Properties of CuIn1-xGaxSe2 films prepared by the rapid thermal annealing of spray-deposited CuIn1-xGaxS2 and Se Christopher Exstrom; 13. I-III-VI2 (copper chalcopyrite-based) thin films for a photoelectrochemical water-splitting tandem-hybrid photocathode Jess Kaneshiro; 14. Identification of impurity phases in Cu2ZnSnS4 thin-film solar cell absorber material by soft x-ray absorption spectroscopy Marcus Bär; 15. Kesterites and chalcopyrites: a comparison of close cousins Ingrid Repins; 16. Impact of thickness variation of the ZnO:Al window layer on optoelectronic properties of CIGSSe solar cells Jan Keller; 17. Fabrication of high efficiency flexible CIGS solar cell with ZnO diffusion barrier on stainless steel substrate Dowon Bae; 18. Copper indium diselenide thin films using a hybrid method of chemical bath deposition and thermal evaporation R. Ernesto Ornelas A.; Part IV. III-V and Other Materials: 19. The two origins of p-type conduction in transparent conducting Ga-doped SnO2 thin films Huan-hua Wang; 20. DEMUX SiC optical transducers for fluorescent proteins detection Manuela Vieira; 21. Transmission electron microscopy of misfit dislocation and strain relaxation in lattice mismatched III-V heterostructures versus substrate surface treatment Yi Wang; 22. Structure and photocatalytic property of Bi25FeO40 crystallites derived from the PEG assisted sol-gel methods Jinrong Cheng; 23. Zinc nitride films by reactive sputtering of Zn in N2-containing atmosphere Daniel Georgiev.

Descriere

This volume contains reports on the state of compound semiconductor-based devices with applications to environmental conservation and energy use reduction.