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Materials and Physics for Nonvolatile Memories: Volume 1160: MRS Proceedings

Editat de Yoshihisa Fujisaki, Rainer Waser, Tingkai Li, Caroline Bonafos
en Limba Engleză Hardback – 16 noi 2009
This third book in a series on nonvolatile memories builds on fundamental materials properties, materials integration, demonstration, and industrial devices gathered in those previous. A strong and increasing interest in nonvolatile memories, both domestic and international, indicates the worldwide importance of these materials and memory devices. The book features research on advanced flash memories, including nanoparticle floating gate FETs, MRAM, FeRAM, ReRAM and phase change RAMs, as well as memories using polymer materials. Papers from a joint session with Symposium FF, Novel Materials and Devices for Spintronics, are also included.
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Specificații

ISBN-13: 9781605111339
ISBN-10: 1605111333
Pagini: 199
Dimensiuni: 152 x 228 x 15 mm
Greutate: 0.41 kg
Editura: Cambridge University Press
Colecția Cambridge University Press
Seria MRS Proceedings

Locul publicării:New York, United States

Cuprins

Part I. Advanced Flash I; Part II. Charge Trap Memory I; Part III. Magnetic Resistive RAM; Part IV. Poster Session: Advanced Flash II; Part V. Poster Session: Charge Trap II and MRAM; Part VI. Ferroelectric Memory; Part VII. Resistive Switching RAM I; Part VIII. Resistive Switching RAM II; Part IX. Poster Session: Resistive Switching RAM III; Part X. Poster Session: Phase Change RAM I; Part XI. Phase Change RAM II; Part XII. Phase Change RAM III; Author index; Subject index.

Descriere

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.