Crucial Issues in Semiconductor Materials and Processing Technologies: NATO Science Series E:, cartea 222
Editat de S. Coffa, F. Priolo, Emanuele Rimini, J. M. Poateen Limba Engleză Hardback – 31 oct 1992
Toate formatele și edițiile | Preț | Express |
---|---|---|
Paperback (1) | 1194.09 lei 6-8 săpt. | |
SPRINGER NETHERLANDS – 13 oct 2012 | 1194.09 lei 6-8 săpt. | |
Hardback (1) | 1200.26 lei 6-8 săpt. | |
SPRINGER NETHERLANDS – 31 oct 1992 | 1200.26 lei 6-8 săpt. |
Din seria NATO Science Series E:
- Preț: 1500.32 lei
- Preț: 1500.11 lei
- Preț: 912.68 lei
- 24% Preț: 1570.62 lei
- 20% Preț: 336.38 lei
- Preț: 386.44 lei
- Preț: 375.82 lei
- Preț: 412.24 lei
- 18% Preț: 1189.03 lei
- 18% Preț: 1783.80 lei
- 18% Preț: 1193.96 lei
- Preț: 370.17 lei
- Preț: 397.66 lei
- 18% Preț: 1788.40 lei
- 5% Preț: 356.82 lei
- Preț: 395.59 lei
- 18% Preț: 1785.49 lei
- Preț: 408.32 lei
- Preț: 387.92 lei
- Preț: 387.40 lei
- 18% Preț: 2939.01 lei
- Preț: 377.82 lei
- 5% Preț: 379.93 lei
- 18% Preț: 1193.33 lei
- 18% Preț: 1194.41 lei
- 18% Preț: 1199.00 lei
- 5% Preț: 3430.36 lei
- 18% Preț: 1787.17 lei
- 5% Preț: 368.03 lei
- 18% Preț: 1192.57 lei
- Preț: 381.57 lei
- Preț: 384.38 lei
- 18% Preț: 2417.66 lei
- 5% Preț: 1388.23 lei
- Preț: 384.75 lei
- 5% Preț: 2080.97 lei
- 18% Preț: 2961.39 lei
Preț: 1200.26 lei
Preț vechi: 1463.72 lei
-18% Nou
Puncte Express: 1800
Preț estimativ în valută:
229.73€ • 239.43$ • 191.24£
229.73€ • 239.43$ • 191.24£
Carte tipărită la comandă
Livrare economică 06-20 ianuarie 25
Preluare comenzi: 021 569.72.76
Specificații
ISBN-13: 9780792320036
ISBN-10: 0792320034
Pagini: 538
Ilustrații: XIX, 538 p.
Dimensiuni: 155 x 235 x 32 mm
Greutate: 0.96 kg
Ediția:1992
Editura: SPRINGER NETHERLANDS
Colecția Springer
Seria NATO Science Series E:
Locul publicării:Dordrecht, Netherlands
ISBN-10: 0792320034
Pagini: 538
Ilustrații: XIX, 538 p.
Dimensiuni: 155 x 235 x 32 mm
Greutate: 0.96 kg
Ediția:1992
Editura: SPRINGER NETHERLANDS
Colecția Springer
Seria NATO Science Series E:
Locul publicării:Dordrecht, Netherlands
Public țintă
ResearchCuprins
*Defect Aspects of Advanced Device Technologies.- Field Effect Analysis in Low Voltage Operation a-Si:H Thin Film Transistors with Very Thin PECVD a-SiO2 Gate Dielectric.- *Silicon and Silicon: Germanium Alloy Growth; Means and Applications.- *Preparation and Characterization of Silicon Ribbons.- Rapid Thermal Chemical Vapor Deposition of Six Ge1-x Alloys on Si and SiO2 and New Applications of Six Ge1-x Alloys in Advanced MOSFET Processes.- *Kinetics and Dynamics of MBE Growth.- Effects of Near-Interface Defects on the Optical Properties of MBE Grown GaAs/AlGaAs Layers.- *Optoelectric Materials.- Electrical Characteristics of PECVD Silicon Nitride/Compound Semiconductor Interfaces for Optoelectronic Device Passivation.- *Fundamentals of Semiconductor Processing.- Optical Analysis of Oxygen in Epitaxial Silicon.- Electrical Properties of “Clean” and Fe-Decorated Stacking Faults in p-type Si.- On the Dirty Contacts on n-type Silicon.- Mössbauer Study of the DX-Center in Te-Implanted Alx Ga1-x As.- *Surface Science and Semiconductor Processing.- *Lithography for Manufacturing at 0.25 Micrometer and Below.- *Basic Aspects of Ion Implantation.- *Trends in Ion Implantation for Semiconductor and Optical Materials Research.- Orientation Phenomena in MeV Implants of P in Si.- Deep Implants by Means of Channeling: Ion Distribution and Radiation Damage in Angle Controlled N+ Implantation in Silicon.- Dislocation Formation in Si Implanted at Elevated Temperature.- Preparation and Characterization of Thin Film Simox Materials.- The Effect of Electronic Energy Loss on Epitaxial YBa2Cu3O7 Thin Films After Heavy Ion Irradiation and Annealing up to Room Temperature.- Structural Study of The Epitaxial Realignment of Polycrystalline Si Films onto Si Substrates.- *Plasma Immersion IonImplantation: A Perspective.- A Sheet Stress Measurement Technique Using Thin Films to Measure Stresses in Inert-Gas Implanted Silicon.- Plasma Etching Processes.- *Charge Trapping, Degradation and Wearout of Thin Dielectric Layers During Electrical Stressing.- Minority Carrier Lifetime Measurements After High Temperature Pretreatment.- *Copper-Based Metallization.- Thermal Stability of Ti-Mo and Ti-Cu Bilayer Thin Films on Alumina.- Hyperfine Fields in Epitaxially Grown Co on GaAs.- Titanium Nitride Process Development.- *Materials Aspects and Implementation of Silicides for ULSI.- Ion Beam Synthesis of Buried Iron Disilicide.- Diffusion in Cobalt Suicide During Silicide Formation.- Formation of Germanides by Rapid Thermal Annealing and Their Applications in Advanced MOSFET Processes.- *Diffusion in Crystalline Silicon and Germanium — The State of the Art in Brief.- Symmetry Methods in Diffusion.- Diffusion of Gold in Sputtered Amorphous Silicon.- Dopant Diffusion and Point Defects in Silicon During Silicidation.- Lateral Diffusion Couples and Their Contribution to Understanding Thin Film Reactions.- *Diffusion and Defects in Amorphous Silicon.- EPR Study of Defects Produced by MeV Ion Implantation into Silicon.- Vacancy Character of Damage Zones in Ion-Irradiated Silicon.- Multiple Amorphous States in Ion Implanted Semiconductors (Si and InP).- *The Mechanism of Solid Phase Epitaxy.- The Amorphous Side of Solid Phase Epitaxy.- *Metal-Enhanced Growth of Silicon.- *Ion-Assisted Phase Transitions in Silicon.- Ion-Assisted Nucleation in Amorphous Silicon.- List of Participants.