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MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch de Viranjay M. Srivastava

MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch: Analog Circuits and Signal Processing, cartea 122

Autor Viranjay M. Srivastava, Ghanshyam Singh
en Limba Engleză Hardback – 18 oct 2013
This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET. The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition.
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Specificații

ISBN-13: 9783319011646
ISBN-10: 3319011642
Pagini: 216
Ilustrații: XV, 199 p. 55 illus., 45 illus. in color.
Dimensiuni: 155 x 235 x 17 mm
Greutate: 0.56 kg
Ediția:2014
Editura: Springer International Publishing
Colecția Springer
Seria Analog Circuits and Signal Processing

Locul publicării:Cham, Switzerland

Public țintă

Professional/practitioner

Cuprins

Introduction.- Design of Double-Pole Four-Throw RF Switch.- Design of Double-Gate MOSFET.- Double-Pole Four-Throw RF Switch Based on Double-Gate MOSFET.- Cylindrical Surrounding Double-Gate RF MOSFET.- Hafnium Dioxide Based Double-Pole Four-Throw Double-Gate RF CMOS Switch.- Testing of MOSFET Surfaces Using Image Acquisition.- Conclusions and Future Scope.

Notă biografică

Dr. Viranjay M. Srivastava is an Assistant Professor at Jaypee University of Information Technology. Dr. Ghanshyam Singh is an Associate Professor at Jaypee University of Information Technology.

Textul de pe ultima copertă

This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET.  The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET  is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition.
 ·         Provides a single-source reference to the latest technologies for the design of
Double-gate MOSFET, Cylindrical Surrounding double-gate MOSFET and HFO2 based MOSFET;
·         Explains the design of RF switches using the technologies presented and simulates switches;
·         Verifies parameters and discusses feasibility of devices and switches.

Caracteristici

Provides a single-source reference to the latest technologies for the design of Double-gate MOSFET, Cylindrical Surrounding double-gate MOSFET and HFO2 based MOSFET Explains the design of RF switches using the technologies presented and simulates switches Verifies parameters and discusses feasibility of devices and switches Includes supplementary material: sn.pub/extras