Cantitate/Preț
Produs
Total produse
Vezi coșul
Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment: Proceedings of the NATO Advanced Research Workshop on Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment, Kiev, Ukraine, 26-30 April 2004 de Denis Flandre

Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment: Proceedings of the NATO Advanced Research Workshop on Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment, Kiev, Ukraine, 26-30 April 2004: NATO Science Series II: Mathematics, Physics and Chemistry, cartea 185

Editat de Denis Flandre, Alexei N. Nazarov, Peter L.F. Hemment
en Limba Engleză Paperback – 15 feb 2005
This proceedings volume archives the contributions of the speakers who attended the NATO Advanced Research Workshop on “Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment” held at the Sanatorium Puscha Ozerna, th th Kyiv, Ukraine, from 25 to 29 April 2004. The semiconductor industry has maintained a very rapid growth during the last three decades through impressive technological achievements which have resulted in products with higher performance and lower cost per function. After many years of development semiconductor-on-insulator materials have entered volume production and will increasingly be used by the manufacturing industry. The wider use of semiconductor (especially silicon) on insulator materials will not only enable the benefits of these materials to be further demonstrated but, also, will drive down the cost of substrates which, in turn, will stimulate the development of other novel devices and applications. In itself this trend will encourage the promotion of the skills and ideas generated by researchers in the Former Soviet Union and Eastern Europe and their incorporation in future collaborations.
Citește tot Restrânge

Toate formatele și edițiile

Toate formatele și edițiile Preț Express
Paperback (1) 64365 lei  6-8 săpt.
  SPRINGER NETHERLANDS – 15 feb 2005 64365 lei  6-8 săpt.
Hardback (1) 65379 lei  6-8 săpt.
  SPRINGER NETHERLANDS – 15 feb 2005 65379 lei  6-8 săpt.

Din seria NATO Science Series II: Mathematics, Physics and Chemistry

Preț: 64365 lei

Preț vechi: 75724 lei
-15% Nou

Puncte Express: 965
Preț estimativ în valută:
12319€ • 12813$ • 10324£

Carte tipărită la comandă

Livrare economică 14-28 martie

 Adaugă în coș

Wish list
Gift list
Am citit!
Adaugă în listă
Preluare comenzi: 021 569.72.76

Specificații

ISBN-13: 9781402030123
ISBN-10: 1402030126
Pagini: 364
Ilustrații: XII, 348 p.
Dimensiuni: 155 x 235 x 19 mm
Greutate: 0.51 kg
Ediția:2005
Editura: SPRINGER NETHERLANDS
Colecția Springer
Seria NATO Science Series II: Mathematics, Physics and Chemistry

Locul publicării:Dordrecht, Netherlands

Public țintă

Research

Cuprins

Technology and Economics.- High Temperature Electronics - Cluster Effects.- On the Evolution of SOI Materials and Devices.- SOI Technology as a Basis for Microphotonic-Microelectronic Integrated Devices.- SOI Material Technologies.- Smart Cut Technology: The Path for Advanced SOI Substrates.- Porous Silicon Based SOI: History and Prospects.- Achievement of SiGe-on-Insulator Technology.- CVD Diamond Films for SOI Technologies.- Radical Beam Quasiepitaxy Technology for Fabrication of Wide-Gap Semiconductors on Insulator.- Impact of Hydrostatic Pressure during Annealing of Si:O on Creation of Simox - Like Structures.- SiO2 and Si3N4 Phase Formation by Ion Implantation with In-Situ Ultrasound Treatment.- Fabrication and Characterisation of Silicon on Insulator Substrates Incorporating Thermal Vias.- Reliability and Operation of SOI Devices in Harsh Environment.- Reliability and Electrical Fluctuations in Advanced SOI CMOS Devices.- Hydrogen and High-Temperature Charge Instability of SOI Structures and MOSFETs.- Recent Advances in SOI MOSFET Devices and Circuits for Ultra-Low Power / High Temperature Applications.- Silicon-on-Insulator Circuits for Application at High Temperatures.- High-Voltage SOI Devices for Automotive Applications.- Heat Generation Analysis in SOI LDMOS Power Transistors.- Novel SOI MOSFET Structure for Operation over a Wide Range of Temperatures.- MOSFETs Scaling Down: Advantages and Disadvantages for High Temperature Applications.- Temperature Dependence of RF Losses in High-Resistivity SOI Substrates.- Radiation Effects.- Review of Radiation Effects in Single and Multiple-Gate SOI MOSFETs.- Radiation Effects in SOI: Irradiation by High Energy Ions and Electrons.- Radiation Characteristics of Short P- Channel MOSFETs on SOI Substrates.- Total Dose Behavior of Partially Depleted Delecut SOI MOSFETs.- Radiation Effect on Electrical Properties of Fully-Depleted Unibond SOI MOSFETs.- Characterization and Simulation of SOI Devices Operating under Harsh Environment.- Low Cost High Temperature Test System for SOI Devices.- Characterization of Carrier Generation in Thin-Film SOI Devices by Reverse Gated-Diode Technique and its Application at High Temperatures.- Back-Gate Induced Noise Overshoot in Partially-Depleted SOI MOSFETs.- Novel SOI Devices and Sensors Operating at Harsh Conditions.- SiGe Heterojunction Bipolar Transistors on Insulating Substrates.- Silicon-on-Insulator Substrates with Buried Ground Planes (GPSOI).- High-Voltage High-Current DMOS Transistor Compatible with High-Temperature Thin-Film SOI CMOS Applications.- A Novel Low Leakage EEPROM Cell for Application in an Extended Temperature Range (?40°C Up to 225°C).- Design, Fabrication and Characterization of SOI Pixel Detectors of Ionizing Radiation.- Polysilicon-on-Insulator Layers at Cryogenic Temperatures and High Magnetic Fields.- Planar Photomagnetic Effect SOI Sensors for Various Applications with Low Detection Limit.- Theoretical Limit for the SiO2 Thickness in Silicon MOS Devices.- Compact Model of the Nanoscale Gate-All-Around MOSFET.- Self-Assembled Semiconductor Nanowires on Silicon and Insulating Substrates: Experimental Behavior.- Fabrication of SOI Nano Devices.