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Variation Aware Analog and Mixed-Signal Circuit Design in Emerging Multi-Gate CMOS Technologies de Michael Fulde

Variation Aware Analog and Mixed-Signal Circuit Design in Emerging Multi-Gate CMOS Technologies: Springer Series in Advanced Microelectronics, cartea 28

Autor Michael Fulde
en Limba Engleză Paperback – 14 mar 2012
Since scaling of CMOS is reaching the nanometer area serious limitations enforce the introduction of novel materials, device architectures and device concepts. Multi-gate devices employing high-k gate dielectrics are considered as promising solution overcoming these scaling limitations of conventional planar bulk CMOS. Variation Aware Analog and Mixed-Signal Circuit Design in Emerging Multi-Gate CMOS Technologies provides a technology oriented assessment of analog and mixed-signal circuits in emerging high-k and multi-gate CMOS technologies.
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Specificații

ISBN-13: 9789400730830
ISBN-10: 9400730837
Pagini: 140
Ilustrații: X, 127 p.
Dimensiuni: 155 x 235 x 7 mm
Greutate: 0.2 kg
Ediția:2010
Editura: SPRINGER NETHERLANDS
Colecția Springer
Seria Springer Series in Advanced Microelectronics

Locul publicării:Dordrecht, Netherlands

Public țintă

Research

Cuprins

Analog Properties of Multi-Gate MOSFETs.- High-k Related Design Issues.- Multi-Gate Related Design Aspects.- Multi-Gate Tunneling FETs.- Conclusions and Outlook.

Textul de pe ultima copertă

Since scaling of CMOS is reaching the nanometer area serious limitations enforce the introduction of novel materials, device architectures and device concepts. Multi-gate devices employing high-k gate dielectrics are considered as promising solution overcoming these scaling limitations of conventional planar bulk CMOS. Variation Aware Analog and Mixed-Signal Circuit Design in Emerging Multi-Gate CMOS Technologies provides a technology oriented assessment of analog and mixed-signal circuits in emerging high-k and multi-gate CMOS technologies. Closing the gap from technology to design a detailed insight into circuit performance trade-offs related to multi-gate and high-k device specifics is provided. The new effect of transient threshold voltage variations is described with an equivalent model that allows a systematic assessment of the consequences on circuit level and the development of countermeasures to compensate for performance degradation in comparators and A/D converters. Key analog, mixed-signal and RF building blocks are realized in high-k multi-gate technology and benchmarked against planar bulk. Performance and area benefits, enabled by advantageous multi-gate device properties are analytically and experimentally quantified for reference circuits, operational amplifiers and D/A converters. This is based on first time silicon investigations of complex mixed-signal building blocks as D/A converter and PLL with multi-gate devices. As another first, the integration of tunnel transistors in a multi-gate process is described, enabling devices with promising scaling and analog properties. Based on these devices a novel reference circuit is proposed which features low power consumption.

Caracteristici

First book that covers high-k related design aspects regarding analog/mixed-signal circuits First hardware based analog/mixed-signal circuit assessment in multi-gate CMOS Close link to device and technology Covers tunnel devices as outlook beyond CMOS Includes supplementary material: sn.pub/extras