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Low Power and Reliable SRAM Memory Cell and Array Design de Koichiro Ishibashi

Low Power and Reliable SRAM Memory Cell and Array Design: Springer Series in Advanced Microelectronics, cartea 31

Editat de Koichiro Ishibashi, Kenichi Osada
en Limba Engleză Paperback – 27 noi 2013
Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses various issues for designing SRAM memory cells for advanced CMOS technology. To study LSI design, SRAM cell design is the best materials subject because issues about variability, leakage and reliability have to be taken into account for the design.
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Specificații

ISBN-13: 9783642270185
ISBN-10: 3642270182
Pagini: 156
Ilustrații: XII, 144 p.
Dimensiuni: 155 x 235 x 8 mm
Greutate: 0.23 kg
Ediția:2011
Editura: Springer Berlin, Heidelberg
Colecția Springer
Seria Springer Series in Advanced Microelectronics

Locul publicării:Berlin, Heidelberg, Germany

Public țintă

Research

Cuprins

Preface.- Introduction.- Fundamentals of SRAM Memory Cell.- Electrical Stability.- Sensitivity Analysis.- Memory Cell Design Technique for Low Power SOC.- Array Design Techniques.- Dummy Cell Design.- Reliable Memory Cell Design.- Future Technologies

Textul de pe ultima copertă

Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses various issues for designing SRAM memory cells for advanced CMOS technology. To study LSI design, SRAM cell design is the best materials subject because issues about variability, leakage and reliability have to be taken into account for the design.

Caracteristici

Basic book on memory design Combines the aspects of SRAM technique, analysis and design A valuable reference work for researchers and engineers alike Includes supplementary material: sn.pub/extras