Cantitate/Preț
Produs
Total produse
Vezi coșul
Low Power and Reliable SRAM Memory Cell and Array Design de Koichiro Ishibashi

Low Power and Reliable SRAM Memory Cell and Array Design: Springer Series in Advanced Microelectronics, cartea 31

Editat de Koichiro Ishibashi, Kenichi Osada
en Limba Engleză Paperback – 27 noi 2013
Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses various issues for designing SRAM memory cells for advanced CMOS technology. To study LSI design, SRAM cell design is the best materials subject because issues about variability, leakage and reliability have to be taken into account for the design.
Citește tot Restrânge

Toate formatele și edițiile

Toate formatele și edițiile Preț Express
Paperback (1) 62286 lei  6-8 săpt.
  Springer Berlin, Heidelberg – 27 noi 2013 62286 lei  6-8 săpt.
Hardback (1) 62768 lei  6-8 săpt.
  Springer Berlin, Heidelberg – 18 aug 2011 62768 lei  6-8 săpt.

Din seria Springer Series in Advanced Microelectronics

Preț: 62286 lei

Preț vechi: 73277 lei
-15% Nou

Puncte Express: 934
Preț estimativ în valută:
11920€ • 12418$ • 9911£

Carte tipărită la comandă

Livrare economică 11-25 februarie 25

 Adaugă în coș

Wish list
Gift list
Am citit!
Adaugă în listă
Preluare comenzi: 021 569.72.76

Specificații

ISBN-13: 9783642270185
ISBN-10: 3642270182
Pagini: 156
Ilustrații: XII, 144 p.
Dimensiuni: 155 x 235 x 8 mm
Greutate: 0.23 kg
Ediția:2011
Editura: Springer Berlin, Heidelberg
Colecția Springer
Seria Springer Series in Advanced Microelectronics

Locul publicării:Berlin, Heidelberg, Germany

Public țintă

Research

Cuprins

Preface.- Introduction.- Fundamentals of SRAM Memory Cell.- Electrical Stability.- Sensitivity Analysis.- Memory Cell Design Technique for Low Power SOC.- Array Design Techniques.- Dummy Cell Design.- Reliable Memory Cell Design.- Future Technologies

Textul de pe ultima copertă

Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses various issues for designing SRAM memory cells for advanced CMOS technology. To study LSI design, SRAM cell design is the best materials subject because issues about variability, leakage and reliability have to be taken into account for the design.

Caracteristici

Basic book on memory design Combines the aspects of SRAM technique, analysis and design A valuable reference work for researchers and engineers alike Includes supplementary material: sn.pub/extras