High-Speed Electronics: Basic Physical Phenomena and Device Principles Proceedings of the International Conference, Stockholm, Sweden, August 7–9, 1986: Springer Series in Electronics and Photonics, cartea 22
Editat de Bengt Källbäck, Heinz Benekingen Limba Engleză Paperback – 15 dec 2011
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Specificații
ISBN-13: 9783642829819
ISBN-10: 3642829813
Pagini: 248
Ilustrații: X, 234 p.
Dimensiuni: 155 x 235 x 13 mm
Greutate: 0.35 kg
Ediția:Softcover reprint of the original 1st ed. 1986
Editura: Springer Berlin, Heidelberg
Colecția Springer
Seria Springer Series in Electronics and Photonics
Locul publicării:Berlin, Heidelberg, Germany
ISBN-10: 3642829813
Pagini: 248
Ilustrații: X, 234 p.
Dimensiuni: 155 x 235 x 13 mm
Greutate: 0.35 kg
Ediția:Softcover reprint of the original 1st ed. 1986
Editura: Springer Berlin, Heidelberg
Colecția Springer
Seria Springer Series in Electronics and Photonics
Locul publicării:Berlin, Heidelberg, Germany
Public țintă
ResearchCuprins
I Hot-Electron Dynamics.- Modelling of High Electron Velocity Effects for Devices.- Ballistic Transport and Electron Spectroscopy in Tunnelling Hot Electron Transfer Amplifiers (THETA).- Hot Electron Transistors.- Tunneling Through III—V Low-Barrier Heterostructures.- Velocity Overshoot and Suppression of Diffusivity and Microwave Noise in Short n+-n-n+ Structures of GaAs.- Mobility Overshoot of Hot Electrons.- Monte-Carlo Simulation of the Effects Induced by Real-Space Transfer in a HEMT.- Application of the Integral Boltzmann Equation to the Hot Electron Problem in an Inhomogeneous Submicron Structure.- Three Picosecond Oscillations in Avalanche Electron- Hole Plasma Induced by Energy Relaxation Phenomena.- II Heterostructures, Superlattices and Quantum Wells.- Resonant Tunneling Transistors, Tunneling Superlattice Devices and New Quantum Well Avalanche Photodiodes.- Novel Real-Space Transfer Devices.- Transport Characteristics in Heterostructure Devices.- Technical Issues of High-Speed Heterostructure Devices.- Hot-Carrier-Excited Two-Dimensional Plasmon in Selectively Doped AIGaAs/GaAs Heterointerface Under High Electric Field Application.- Optical High-Field-Transport Experiments in GaAs Quantum Wells.- Optical Time-of-Flight Investigation in Ambipolar Carrier Transport in Specially Designed GaAs/GaA1As Quantum Well Structures.- An Ultra-Fast Optical Modulator: The Double-Well GaAs/GaAlAs Superlattice (DWSL).- High-Velocity Vertical Transport in Graded Gap GaAs/GaA1As Superlattices.- Modelling of Mobility Degradation in Submicron MOSFETs After Electrical Stressing.- Negative Differential Mobility and Drift Velocity Overshoot in a Single Quantum Well of AIGaAs/GaAs/AIGaAs Heterostructure.- Monte Carlo Study of Hot Electron Transport in GaAs-AIGaAs Quantum Wells.-III High-Speed Electronic Devices.- High-Speed Bulk Unipolar Structures in Silicon.- Silicon Bulk Barrier Diodes Fabricated by LPVPE.- Impact Ionization Breakdown of GaAs Current Limiters.- The New High Speed Devices: The Barrier Transistor and the TEG-Base Transistor.- Monte Carlo Investigation of the High Electron Mobility Transistor.- Excess Gate Current Due to Hot Electrons in GaAs-Gate FETs.- Potential Barriers in Doped GaAs by OM-VPE.- Low Noise High Electron Mobility Transistors Grown By MOVPE.- Emitter-Coupled Logic Ring Oscillators Implemented with GaAs/GaAlAs Single and Double Heterojunction Bipolar Transistors: A Comparison.- Self-Aligned Technology Using Refractory Ohmic Contacts for GaAs/GaAlAs Heterojunction Bipolar Transistors.- Novel Cryoelectronic Device Concept Based on Magnetically Controlled Current Flow in Bulk Semiconductors.- InGaAlAs/InGaAs/InGaAlAs NnpnN Double Heterojunction Bipolar Transistors: Experimental Characteristics and Monte-Carlo Interpretation.- Lattice-Strained Double Heterojunction InGaAs/GaAs Bipolar Transistors.- Cryogenic GaAs Integrated Circuits Using a Lightly Doped GaAs FET Structure.- GaAs-on-Insulator Structure Prepared by Heteroepitaxy of Fluorides and GaAs.- IV High-Speed Opto-Electronics.- Optoelectronic Generation of Very High Speed Electromagnetic Transients.- Picosecond Electro-Optic Sampling.- High-Speed Integrated Circuit Testing by Time-Resolved Photoemission.- Overview of Optical Switching and Bistability.- Monte Carlo Investigation of High-Speed GaAs Schottky Barrier Photodiode.- A High-Speed Au/In0.53Ga0.47As/InP Schottky Barrier Photodiode for 1. 3–1. 65µm Photodetection.- High Sensitivity Picosecond Optical Pulse Detection by Semiconductor Laser Amplifiers Via Cross-Correlation.- GaAs Photoconductors toCharacterize Picosecond Response in GaAs Integrated Devices and Circuits.- Characterization of On-Chip Polycrystalline Silicon Photoconductors.- Index of Contributors.