Nanoscale Semiconductor Memories: Technology and Applications: Devices, Circuits, and Systems
Editat de Santosh K. Kurinec, Krzysztof Iniewskien Limba Engleză Hardback – 12 dec 2013
The book begins with coverage of SRAM, addressing the design challenges as the technology scales, then provides design strategies to mitigate radiation induced upsets in SRAM. It discusses the current state-of-the-art DRAM technology and the need to develop high performance sense amplifier circuitry. The text then covers the novel concept of capacitorless 1T DRAM, termed as Advanced-RAM or A-RAM, and presents a discussion on quantum dot (QD) based flash memory.
Building on this foundation, the coverage turns to STT-RAM, emphasizing scalable embedded STT-RAM, and the physics and engineering of magnetic domain wall "racetrack" memory. The book also discusses state-of-the-art modeling applied to phase change memory devices and includes an extensive review of RRAM, highlighting the physics of operation and analyzing different materials systems currently under investigation.
The hunt is still on for universal memory that fits all the requirements of an "ideal memory" capable of high-density storage, low-power operation, unparalleled speed, high endurance, and low cost. Taking an interdisciplinary approach, this book bridges technological and application issues to provide the groundwork for developing custom designed memory systems.
Toate formatele și edițiile | Preț | Express |
---|---|---|
Paperback (1) | 471.22 lei 6-8 săpt. | |
CRC Press – 29 mar 2017 | 471.22 lei 6-8 săpt. | |
Hardback (1) | 1097.15 lei 6-8 săpt. | |
CRC Press – 12 dec 2013 | 1097.15 lei 6-8 săpt. |
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Specificații
ISBN-13: 9781466560604
ISBN-10: 1466560606
Pagini: 448
Ilustrații: 316 b/w images, 17 tables and 83
Dimensiuni: 156 x 234 x 30 mm
Greutate: 0.75 kg
Ediția:1
Editura: CRC Press
Colecția CRC Press
Seria Devices, Circuits, and Systems
ISBN-10: 1466560606
Pagini: 448
Ilustrații: 316 b/w images, 17 tables and 83
Dimensiuni: 156 x 234 x 30 mm
Greutate: 0.75 kg
Ediția:1
Editura: CRC Press
Colecția CRC Press
Seria Devices, Circuits, and Systems
Cuprins
SRAM: The Benchmark of the VLSI Technology. Multiple Upsets in SRAMs Processed in Decananometric CMOS Technologies. Radiation Hardened by Design SRAM Strategies for TID and SEE Mitigation. Dynamic Random Access Memory. DRAM Technology. Concepts of Capacitor-less 1T-DRAM and Unified Memory on SOI. A-RAM family: Novel Capacitor-less 1T-DRAM Cells for Beyond 22nm Nodes. Novel Flash Memory. Quantum Dot Based Flash Memories. Magnetic Memory. Spin-Transfer-Torque MRAM. Magnetic Domain Wall "Racetrack" Memory. Phase Change Memory. Phase Change Memory (PCM) Modeling and Simulation. Phase Change Memory Devices and Electrothermal Modeling. Resistive Random Access Memory. Non-volatile Memory Device: Resistive Random Access Memory. Nano-scale Resistive Random Access Memory: Materials, Devices and Circuits.
Notă biografică
Kurinec, Santosh K.; Iniewski, Krzysztof
Descriere
The book has two-fold intentions. Firstly it assembles the latest research in the field of nanoscale memories technology in one place. And secondly, it exposes the reader to myriad applications that nanoscale memories technology has enabled. The book is meant for advanced graduate research work or for academicians and researchers. This way the book has a widespread appeal, including practicing engineers, academicians, research scientists, and senior graduate students. Nanoscale memories today have a widespread application range.