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New Perspectives on Surface Passivation: Understanding the Si-Al2O3 Interface de Lachlan E. Black

New Perspectives on Surface Passivation: Understanding the Si-Al2O3 Interface: Springer Theses

Autor Lachlan E. Black
en Limba Engleză Paperback – 22 apr 2018
The book addresses the problem ofpassivation at the surface of crystalline silicon solar cells. Morespecifically, it reports on a high-throughput, industrially compatibledeposition method for Al2O3, enabling its application to commercial solar cells.One of the main focus is on the analysis of the physics of Al2O3 as apassivating dielectric for silicon surfaces. This is accomplished through a comprehensivestudy, which moves from the particular, the case of aluminium oxide on silicon,to the general, the physics of surface recombination, and is able to connecttheory with practice, highlighting relevant commercial applications.


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Specificații

ISBN-13: 9783319813073
ISBN-10: 3319813072
Ilustrații: XXVIII, 204 p. 100 illus., 17 illus. in color.
Dimensiuni: 155 x 235 mm
Greutate: 0.33 kg
Ediția:Softcover reprint of the original 1st ed. 2016
Editura: Springer International Publishing
Colecția Springer
Seria Springer Theses

Locul publicării:Cham, Switzerland

Cuprins

Introduction.- Surface Recombination Theory.- Al2O3 Deposition and Characterisation.- Electrical Properties of the Si..Al2O3 Interface.- Influence of Deposition Parameters.-Effect of Post-Deposition Thermal Processing- Effect of Surface Dopant Concentration.- Effect of Surface Orientation and Morphology.- Relationship Between Al2O3 Bulk and Interface Properties.- Conclusion.

Textul de pe ultima copertă

The book addresses the problem of passivation at the surface of crystalline silicon solar cells. More specifically, it reports on a high-throughput, industrially compatible deposition method for Al2O3, enabling its application to commercial solar cells. One of the main focus is on the analysis of the physics of Al2O3 as a passivating dielectric for silicon surfaces. This is accomplished through a comprehensive study, which moves from the particular, the case of aluminium oxide on silicon, to the general, the physics of surface recombination, and is able to connect theory with practice, highlighting relevant commercial applications.

Caracteristici

Nominated as an outstanding PhD thesis by The Australian National University, Canberra Gives new insights into semiconductor–dielectric interfaces and semiconductor surface recombination mechanisms Reports on a detailed investigation of the properties of Al2O3 as a passivating dielectric for silicon surfaces Describes a high-throughput, industrially compatible deposition method for Al2O3 Includes supplementary material: sn.pub/extras