Advances in Imaging and Electron Physics: Advances in Imaging and Electron Physics, cartea 209
Peter W. Hawkes, Martin Hÿtchen Limba Engleză Hardback – 20 feb 2019
- Contains contributions from leading authorities on the subject matter
- Informs and updates on the latest developments in the field of imaging and electron physics
- Provides practitioners interested in microscopy, optics, image processing, mathematical morphology, electromagnetic fields, electrons and ion emission with a valuable resource
- Features extended articles on the physics of electron devices (especially semiconductor devices), particle optics at high and low energies, microlithography, image science and digital image processing
Toate formatele și edițiile | Preț | Express |
---|---|---|
Hardback (10) | 910.46 lei 5-7 săpt. | +269.59 lei 6-10 zile |
ELSEVIER SCIENCE – 3 apr 2024 | 910.46 lei 5-7 săpt. | +269.59 lei 6-10 zile |
ELSEVIER SCIENCE – 25 aug 2022 | 914.82 lei 5-7 săpt. | |
ELSEVIER SCIENCE – 26 mar 2023 | 915.23 lei 5-7 săpt. | |
ELSEVIER SCIENCE – 20 feb 2019 | 917.09 lei 5-7 săpt. | |
ELSEVIER SCIENCE – 22 mai 2020 | 974.95 lei 5-7 săpt. | |
ELSEVIER SCIENCE – 19 mar 2020 | 975.33 lei 5-7 săpt. | |
ELSEVIER SCIENCE – 12 iul 2019 | 981.08 lei 5-7 săpt. | |
ELSEVIER SCIENCE – 27 aug 2021 | 1039.25 lei 5-7 săpt. | |
ELSEVIER SCIENCE – 28 iul 2020 | 1042.91 lei 5-7 săpt. | |
ELSEVIER SCIENCE – 15 iun 2021 | 1111.33 lei 5-7 săpt. |
Preț: 917.09 lei
Preț vechi: 1547.78 lei
-41% Nou
Puncte Express: 1376
Preț estimativ în valută:
175.51€ • 181.68$ • 148.34£
175.51€ • 181.68$ • 148.34£
Carte tipărită la comandă
Livrare economică 26 februarie-12 martie
Preluare comenzi: 021 569.72.76
Specificații
ISBN-13: 9780128171776
ISBN-10: 0128171774
Pagini: 362
Dimensiuni: 152 x 229 mm
Greutate: 0.65 kg
Editura: ELSEVIER SCIENCE
Seria Advances in Imaging and Electron Physics
ISBN-10: 0128171774
Pagini: 362
Dimensiuni: 152 x 229 mm
Greutate: 0.65 kg
Editura: ELSEVIER SCIENCE
Seria Advances in Imaging and Electron Physics
Cuprins
1. Introduction to EELS
Alberto Eljarrat Ascunce
2. Low-loss EELS methods
Alberto Eljarrat Ascunce
3. DFT modeling of wurtzite III-nitride ternary alloys
Alberto Eljarrat Ascunce
4. AlN/GaN and InAlN/GaN DBRs
Alberto Eljarrat Ascunce
5. Multiple InGaN QW heterostructure
Alberto Eljarrat Ascunce
6. Er-doped Si-nc/SiO2 multilayer
Alberto Eljarrat Ascunce
7. Si-NCs embedded in dielectric matrices
Alberto Eljarrat Ascunce
8. EELS Conclusions
Alberto Eljarrat Ascunce
9. High-Tc Superconductors and Magnetic Electron Lenses
Jan-Peter Adriaanse
Alberto Eljarrat Ascunce
2. Low-loss EELS methods
Alberto Eljarrat Ascunce
3. DFT modeling of wurtzite III-nitride ternary alloys
Alberto Eljarrat Ascunce
4. AlN/GaN and InAlN/GaN DBRs
Alberto Eljarrat Ascunce
5. Multiple InGaN QW heterostructure
Alberto Eljarrat Ascunce
6. Er-doped Si-nc/SiO2 multilayer
Alberto Eljarrat Ascunce
7. Si-NCs embedded in dielectric matrices
Alberto Eljarrat Ascunce
8. EELS Conclusions
Alberto Eljarrat Ascunce
9. High-Tc Superconductors and Magnetic Electron Lenses
Jan-Peter Adriaanse